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Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

Toshiba's 650 and 1,200 volt 3rd Generation Silicon Carbide technology is designed for high-efficiency power supply applications. Packaged in the industry standard three-lead TO-247 package, the Silicon Carbide MOSETs are specially designed for high powered industrial applications such as 400 and 800 volts AC for power supplies, photovoltaic inverters, and bi-directional DC-to-DC converters for uninterruptible power supplies. These MOSFETs help to reduce power consumption and improve power density with a higher voltage, faster switching, and lower On-resistance. The 650 V products feature an input capacitance of 4,850 picofarads, a low gate-input charge of 128 nanocoulombs, and a drain-to-source On-resistance of just 15milliohms. The 1200 V products feature an input capacitance of 6000 picofarads, a low gate-input charge of 158 nanocoulombs, and a drain-to-source On-resistance of just 15milliohms.

11/22/2022 6:29:07 PM

Part List

圖片製造商零件編號說明現有數量價格查看詳情
G3 650V SIC-MOSFET TO-247  15MOHTW015N65C,S1FG3 650V SIC-MOSFET TO-247 15MOH39 - 即時供貨$489.38查看詳情
G3 650V SIC-MOSFET TO-247  27MOHTW027N65C,S1FG3 650V SIC-MOSFET TO-247 27MOH20 - 即時供貨$224.08查看詳情
G3 650V SIC-MOSFET TO-247  107MOTW107N65C,S1FG3 650V SIC-MOSFET TO-247 107MO60 - 即時供貨$97.46查看詳情
G3 1200V SIC-MOSFET TO-247  140MTW140N120C,S1FG3 1200V SIC-MOSFET TO-247 140M53 - 即時供貨$110.77查看詳情
G3 1200V SIC-MOSFET TO-247  60MOTW060N120C,S1FG3 1200V SIC-MOSFET TO-247 60MO9 - 即時供貨$188.52查看詳情
G3 1200V SIC-MOSFET TO-247  45MOTW045N120C,S1FG3 1200V SIC-MOSFET TO-247 45MO71 - 即時供貨$232.04查看詳情
G3 1200V SIC-MOSFET TO-247  30MOTW030N120C,S1FG3 1200V SIC-MOSFET TO-247 30MO40 - 即時供貨$312.76查看詳情
G3 1200V SIC-MOSFET TO-247  15MOTW015N120C,S1FG3 1200V SIC-MOSFET TO-247 15MO52 - 即時供貨$635.37查看詳情
G3 650V SIC-MOSFET TO-247  83MOHTW083N65C,S1FG3 650V SIC-MOSFET TO-247 83MOH112 - 即時供貨$133.68查看詳情
G3 650V SIC-MOSFET TO-247  48MOHTW048N65C,S1FG3 650V SIC-MOSFET TO-247 48MOH29 - 即時供貨$161.67查看詳情