VideoLibrary

4th Gen SiC MOSFETs

ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance.

2/6/2023 4:57:29 PM

Part List

圖片製造商零件編號說明現有數量價格查看詳情
DIODE ARRAY SIC 1200V 15A TO-247SCS230KE2HRC11DIODE ARRAY SIC 1200V 15A TO-2472 - 即時供貨$86.13查看詳情
MOSFET 2N-CH 1200V 80A MODULEBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE12 - 即時供貨$2,617.17查看詳情
MOSFET 2N-CH 1200V 180A MODULEBSM180D12P3C007MOSFET 2N-CH 1200V 180A MODULE13 - 即時供貨$4,624.93查看詳情
DIODE SIC 650V 12A TO220ACFPSCS212AGC17DIODE SIC 650V 12A TO220ACFP933 - 即時供貨$54.93查看詳情
DIODE SIC 1.2KV 5A TO220ACFPSCS205KGC17DIODE SIC 1.2KV 5A TO220ACFP1000 - 即時供貨$53.86查看詳情
DIODE SIC 650V 2.15A TO220ACPSCS302AHGC9DIODE SIC 650V 2.15A TO220ACP643 - 即時供貨$24.39查看詳情
DIODE SIC 1.2KV 10A TO220ACFPSCS210KGC17DIODE SIC 1.2KV 10A TO220ACFP314 - 即時供貨$77.18查看詳情
DIODE SIC 1.2KV 20A TO220ACFPSCS220KGC17DIODE SIC 1.2KV 20A TO220ACFP995 - 即時供貨$102.14查看詳情
DIODE ARR SIC 1200V 10A TO-247NSCS220KE2HRC11DIODE ARR SIC 1200V 10A TO-247N0 - 即時供貨$131.05查看詳情
DIODE ARRAY SIC 650V 15A TO-247NSCS230AE2HRC11DIODE ARRAY SIC 650V 15A TO-247N545 - 即時供貨$98.29查看詳情
DIODE ARRAY SIC 1200V 5A TO-247SCS210KE2HRC11DIODE ARRAY SIC 1200V 5A TO-247450 - 即時供貨$90.90查看詳情
DIODE ARRAY SIC 650V 20A TO-247NSCS240AE2HRC11DIODE ARRAY SIC 650V 20A TO-247N0 - 即時供貨$123.66查看詳情
DIODE ARRAY SIC 650V 10A TO-247NSCS220AE2GC11DIODE ARRAY SIC 650V 10A TO-247N283 - 即時供貨$83.42查看詳情
DIODE ARRAY SIC 650V 10A TO-247NSCS220AE2HRC11DIODE ARRAY SIC 650V 10A TO-247N199 - 即時供貨$85.39查看詳情
DIODE ARR SIC 1200V 20A TO-247NSCS240KE2GC11DIODE ARR SIC 1200V 20A TO-247N154 - 即時供貨$201.58查看詳情
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE4 - 即時供貨$5,833.50查看詳情
DIODE SIL CARB 650V 8A TO220ACFPSCS208AGC17DIODE SIL CARB 650V 8A TO220ACFP886 - 即時供貨$23.81查看詳情
DIODE SIL CARB 650V 10A TO220ACPSCS310AHGC9DIODE SIL CARB 650V 10A TO220ACP0 - 即時供貨See Page for Pricing查看詳情
MOSFET IPM 1.2KV 134A MODULEBSM120C12P2C201MOSFET IPM 1.2KV 134A MODULE7 - 即時供貨$2,451.39查看詳情
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P3E005MOSFET 2N-CH 1200V 300A MODULE6 - 即時供貨$11,260.81查看詳情

Related Videos

ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look
ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look

發佈日期：2023-09-20

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

發佈日期：2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

發佈日期：2023-02-06

Related Product Highlight

第四代碳化矽 SiC MOSFET ROHM 的第四代碳化矽 MOSFET 是設計在要求嚴苛的應用中提供無與倫比的效率和效能。
第四代 SiC MOSFET ROHM 的第四代 SiC MOSFET 具有低切換損耗並支援 15 V 閘源電壓，有助於節省元件功耗。
BD3430 DAC 晶片 - MUS-ICT™ 系列 ROHM 的 MUS-ICT 系列包含 BD3430 DAC 晶片 (高階音訊 IC)。

Related Articles and Blogs

半導體材料在電源領域的應用與發展趨勢 隨著全球對高效能電源轉換技術的需求不斷提升，半導體材料在電源領域的應用日益重要。從傳統的矽（Si）功率元件，到近年來快速崛起的寬帶隙半導體材料——碳化矽（SiC）與氮化鎵（GaN），這些技術的進步正在驅動電源轉換技術向更高效率、更高功率密度、更低損耗的方向發展，使得電源系統能夠在更小的體積內達成更高的功率效率與可靠性。
如何在高功率應用中降低損耗、提高效率並延伸溫度範圍 設計人員可使用第 4 代 SiC MOSFET 來大幅提高效率、降低成本，並縮減高電壓、高功率控制電路的尺寸。
寬能隙半導體正在重塑整個運輸產業的面貌 電動車與油電混合車解決方案正讓整個運輸產業經歷劇烈轉型，並使大眾運輸更加環保。

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
4th Generation SiC MOSFETs This presentation will provide a brief overview of ROHM’s latest SiC trench MOSFETs and their advantages for power electronics applications.