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image of Maximum efficiency and power: GaN Maximum efficiency and power: GaN

Advanced GaN reference designs for you!

EPC EPC2152 Integrated ePower Stage Single-Chip Driver PIO | DigiKey

This video discusses the EPC2152 Integrated ePower Stage by EPC, a single-chip driver and half-bridge power stage. It offers fast switching, robust transient handling, and a compact design for high-frequency power applications.

image of Unlocking the power of GaN webinar Unlocking the power of GaN

Our experts from Microchip and EPC will provide valuable insights into the technical advantages and practical applications of GaN-based high power density solutions.

eGaN-based Eighth Brick Converter eGaN-based Eighth Brick Converter 發佈日期：2015-08-24

Review of the design specifications of a 500 W 1/8th brick converter

Duration: 5 minutes
917-EPC2100ENG-ND eGaN Integrated GaN Power 發佈日期：2015-06-19

eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.

Duration: 5 minutes
eGaN FETS Driving eGaN FETs with the LM5113 發佈日期：2012-10-16

The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.

Duration: 15 minutes
Paralleling eGaN FETs Paralleling eGaN® FETs 發佈日期：2012-04-26

Detailing the work done to make it as easy as possible to use eGaN FETs in power conversion applications.

Duration: 10 minutes
2nd Gen eGaN FETs Second Gen Lead Free eGaN® FETs Overview 發佈日期：2011-10-28

The new-generation is lead free and halogen free and has improved electrical performance.

Duration: 5 minutes
917-1027-2-ND eGaN® FET Reliability 更新日期： 2016-03-30

Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.

Duration: 5 minutes
eGan Power Transistors Driving eGaN® Power Transistors 發佈日期：2010-10-11

EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.

Duration: 5 minutes
eGaN FET's Characteristics eGan® FET's Characteristics 發佈日期：2010-10-06

The operation of EPC’s enhancement mode gallium nitride transistors.

Duration: 5 minutes
eGaN Basics eGaN® Basics 發佈日期：2010-09-27

The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.

Duration: 10 minutes
eGaN FETs for DC-DC Conversion eGan® FETs for DC-DC Conversion 發佈日期：2010-01-22

eGan® power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs.

Duration: 5 minutes