eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

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圖片製造商零件編號說明功能嵌入式使用的 IC／零件現有數量價格查看詳情
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015半橋驅動器 (外部 FET)否EPC20150 - 即時供貨$739.94查看詳情
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001半橋驅動器 (外部 FET)否EPC20010 - 即時供貨$976.30查看詳情
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007半橋驅動器 (外部 FET)否EPC80070 - 即時供貨$1,181.84查看詳情
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001半橋驅動器 (外部 FET)否EPC20010 - 即時供貨$739.94查看詳情
PTM Published on: 2010-10-06

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.
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