eGan Power Transistors

Driving eGaN® Power Transistors

EPC

This tutorial covers the advantages of EPC’s enhancement mode gallium nitride transistors. Explored in this module will be how to drive eGaN transistors in order to take advantage of those improvements in actual design circuits. To best understand the differences of an eGaN-specific gate drive and a generic MOSFET driver, the characteristics an “ideal” eGaN gate drive will have to be taken into consideration.

Related Parts

圖片製造商零件編號說明功能嵌入式使用的 IC／零件現有數量價格查看詳情
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015半橋驅動器 (外部 FET)否EPC20150 - 即時供貨$740.88查看詳情
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EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007半橋驅動器 (外部 FET)否EPC80070 - 即時供貨$1,183.35查看詳情
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PTM Published on: 2010-10-11

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.