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Paralleling eGaN® FETs
EPC
This presentation will detail the work EPC has done to make it as easy as possible to use eGaN FETs in power conversion applications where more than one device working in parallel is needed to meet the output power requirements. These challenges will be presented and recommendations made to ensure the best performance from a paralleled switch converter. The discussion will focus on a single gate driver per switch and the half bridge topology.
Related Parts
| 圖片 | 製造商零件編號 | 說明 | 汲極至源極電壓 (Vdss) | 電流 - 連續汲極 (Id) @ 25°C | 現有數量 | 價格 | ||
|---|---|---|---|---|---|---|---|---|
 |  | EPC2015 | GANFET N-CH 40V 33A DIE OUTLINE | 40 V | 33 A (Ta) | 0 - 即時供貨 | See Page for Pricing | 查看詳情 |
|  | EPC2001 | GANFET N-CH 100V 25A DIE OUTLINE | 100 V | 25 A (Ta) | 0 - 即時供貨 | See Page for Pricing | 查看詳情 |
|  | EPC2010 | GANFET N-CH 200V 12A DIE | 200 V | 12 A (Ta) | 0 - 即時供貨 | See Page for Pricing | 查看詳情 |
|  | EPC2014 | GANFET N-CH 40V 10A DIE OUTLINE | 40 V | 10 A (Ta) | 0 - 即時供貨 | See Page for Pricing | 查看詳情 |
|  | EPC2012 | GANFET N-CH 200V 3A DIE | 200 V | 3 A (Ta) | 0 - 即時供貨 | See Page for Pricing | 查看詳情 |
| | EPC2007 | GANFET N-CH 100V 6A DIE OUTLINE | 100 V | 6 A (Ta) | 0 - 即時供貨 | $7.00 | 查看詳情 |
PTM Published on: 2012-04-26
中國香港