One more area where FRAM outshines other memory types is in its write endurance. Because FRAM storage occurs in the state of a dipolar crystal instead of depending on the destructive penetration of electrons into a dielectric, it can last far longer, over 1 billion times longer in fact. This test was done with the same 512 byte sector with both memories writing constantly at 12 kilobytes per second. As one can see, the Flash memory started failing in just under 7 minutes while the FRAM could last over 100,000 years. It is useful to note that although FRAM requires a refresh when read (just like DRAM), the memory will not wear out.