Ferroelectric materials depend on the polarization of the PZT molecule shown here to store the data. Since this material can settle in less than a nanosecond, this polarization activity can occur very quickly and at very low power. This material behaves much like DRAM in that each individual cell uses one transistor and one capacitive element (in this case the PZT crystal). This means that FRAM can scale with much smaller process geometries and is treated similarly by processor architectures, yet it is different in that it is impossible to leak polarization of a crystal like it is the charge of the capacitor in DRAM. This makes FRAM non-volatile, meaning it does not lose data when power is removed. FRAM is also like DRAM in that there is no erase cycle required before a write as there is in Flash memory. This makes it much lower power and faster than Flash, while maintaining the key attribute of non-volatility.