So what is FRAM? FRAM stands for Ferroelectric Random Access Memory. It is the latest in non-volatile memory technology that combines the speed, endurance, and low power of SRAM with the storage capabilities of Flash; replacing both memories on conventional devices with a single unified space for either code or data storage. The low power programming of FRAM is at 1.5 V instead of 10-14 V like Flash, therefore there is no charge pump on the device. This also means there is no erase cycle required when programming FRAM, yielding a lot of speed and low power benefits over Flash memory. These products are available now and one can order, sample, program, and test these devices today. For more, please visit www.ti.com/fram.