Automatic Error Check and Correction (ECC) is built into all of the FERAM devices. The ECC verifies that the data written into each cell is what the user intended to write, making them highly reliable. FERAM has the nearly infinite write endurance and high write speed of SRAM however it is a non-volatile memory, which means that it retains it’s contents when power is removed. This is something that a designer cannot accomplish with simple SRAM. If the designer wishes to use a battery backed SRAM, to achieve quote unquote non-volatile memory using SRAM, they need to add the cost of the battery and socket and may have to add software to monitor the state of the battery. When using an FERAM none of these additional components are required. Because of this, designers can achieve a highly reliable, fast, non-volatile memory with nearly infinite write endurance without the additional cost associated with battery backed SRAM.