Ferroelectric RAM, referred to as F E RAM is a highly reliable random-access memory using a ferroelectric layer to achieve non-volatility. FERAM's advantages over Flash and EEPROMs include lower power usage, faster write performance, and much higher write endurance. Write endurance refers to the number of times that the processor can write to an address without affecting the device’s ability to correctly store the data. Each address in these devices can be written to up to 10 to the 12th times. That is 1 million more times than other non-volatile technologies can endure. FERAM is typically used in applications like smart meters, portable measurement equipment, medical equipment, and financial terminals that require highly reliable, fast, and frequent data storage. These applications are typically data logging applications, like monitoring the temperature of a shipment of goods, or applications that need fast data backup to remember the state of the system if a sudden power loss occurs. These devices fit into may Automotive, Industrial and data infrastructure products that require the low power consumption, speed, reliability, and endurance that FERAM provides.