Two advantages of FERAM as compared to other non-volatile memories, such as EEPROM and flash, is that FERAM features higher write endurance and faster data write times. Each address of FERAMs can be written to up to 10 to the 12th times without degradation in the ability to store data. This means that it can be written to a million more times than EEPROM or FLASH. What does that mean in real terms? If the customer wanted to log data over a 10-year period, the customer could write to an address once every 53 minutes if one used FLASH or EEPROM. With FERAM the customer can write data every 32 micro-seconds and not exceed the write endurance of the part. As shown here from the graph if the customer is logging data, the ability to write data more frequently gives a better representation of the actual data. The next important feature of FERAM is the speed at which the processor can write to the memory. At 150 ns write cycle time, FERAM can be written to 100,000 times faster than conventional Flash memory because it does not need an erase step as part of the writing procedure. The shorter write time provides an advantage over other non-volatile memories in that the power required to back up data in the event of a power loss is lower for FERAM. As a result the amount of time needed to hold up the power rail with a cap is shorter than if another memory technology is used and the risk of data loss is minimized during voltage drops or power shutdown during writing because the data can be written quicker than with other Non-volatile solutions.