Manufacturers of GDT devices specify their products based on ITU K.12 where impulse voltage is typically specified at a 1kV/µs rate of rise. The T Series Fast Acting GDT is specified using a 5kV/µs rate of rise which is 5x faster than the GDT specified per the typical industry standard. To illustrate the differences in performance over industry standard GDTs,  two T series GDTs (2020 and 2031) are compared to an industry standard GDT with similar DC breakdown specifications. The T Series GDT in this example is specifically designed to protect the TBU-CA085-xxx-WH TBU® HSP which has a Vimp rating of 850 V. Voltages above the Vimp rating of the TBU® HSP can cause damage. When exposed to a very fast rising 5kV/µs impulse the T Series GDT limits impulse voltages to levels below the Vimp of the TBU® HSP thus protecting it from damage. The enhanced impulse performance of the T Series GDT will protect the TBU® HSP in many of the harshest transient environments.