Shown here is the behavior of pure Schottky and MPS diodes with the same die dimensions as a function of forward current and temperature. It can be seen that the MPS structure at high current has a stable forward voltage that goes down with temperature. The pure Schottky diode at high temperature shows a forward voltage that grows with exponential behavior, but at low current the pure Schottky has forward voltage lower than the MPS. Vishay utilizes an improved version of the MPS structure to minimize the forward voltage problem at high current without penalizing the forward voltage at low current. The forward voltage handicap due to the p-n area is compensated for with a Ti-Si junction that reduces voltage drop.