SiC is a wide band gap semiconductor. Compared with Si, as shown in the table here, it is characterized by a high band gap, high electric breakdown field, and high saturation speed. The breakdown capability of a diode, its Schottky or p-n junction, is proportional at the critical electric field that is proportional to the square of the semiconductor’s energy gap. For this reason, with SiC it is possible to build a Schottky diode with high-voltage breakdown.