However, the silicon ultrafast soft recovery diode has high reverse recovery energy losses during the turn-off switching interval. The amplitude of the reverse recovery current and recovery time is proportional to its junction temperatures. The reverse recovery currents result in wasted system energy. The unique zero-recovery characteristics of SiC Schottky diodes make them perfect candidates for boost diodes in PFC applications. The main system benefits are improved overall system efficiency due to significantly lower switching losses, reduced system size by elimination of snubber circuitry (as shown in the circuit diagram), possibly lower system cost due to less component count, and a reduced EMI signature.