200 V X4-Class N-Channel Ultra Junction Power MOSFETs with HiPerFET™

IXYS power MOSFETs are developed using a charge compensation principle and proprietary process technology which results in significantly reduced resistance (R_DS(ON)) and gate charge (Q_g). A low ON-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, thereby minimizing the switching losses. A low gate charge results in higher efficiency at light loads and helps to lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dV/dt performance. Due to the positive temperature coefficient of their ON-state resistance, they can be operated in parallel to meet higher current requirements.