IXYS

IGBT with GenX4™ Trench Technology - IXYA20N120_4HV Series

IXYS IGBTs enable designers to use multiple devices in parallel to meet high current requirements and low gate charges

Image of IXYS IGBT with GenX4TM Trench Technology IXYS, a Littelfuse Technology, IXYA20N120_4HV series IGBTs are developed using proprietary XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4) trench IGBT process. These 1200 V devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel to meet high current requirements and low gate charges, which help reduce gate drive requirements and switching losses. They are presented in three different switching classes, A, B, and C, in a TO-263HV package.

Features
  • High power density
  • Low gate drive requirement
  • Positive thermal coefficient of VCE(SAT)
Applications
  • Power inverters
  • UPS systems
  • Motor drives
  • SMPS
  • Battery chargers
  • Welding machines
  • Lamp ballasts

Discrete IGBT product portfolio

IGBT with GenX4™ Trench Technology - IXYA20N120_4HV Series

ImageManufacturer Part NumberDescriptionCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxAvailable QuantityPriceView Details
IGBT PT 1200V 80A TO-263HVIXYA20N120A4HVIGBT PT 1200V 80A TO-263HV135 A1.9V @ 15V, 20A375 W0 - Immediate$57.80View Details
IGBT PT 1200V 76A TO-263HVIXYA20N120B4HVIGBT PT 1200V 76A TO-263HV130 A2.1V @ 15V, 20A375 W600 - Immediate$61.00View Details
IGBT PT 1200V 68A TO-263HVIXYA20N120C4HVIGBT PT 1200V 68A TO-263HV120 A2.5V @ 15V, 20A375 W278 - Immediate
250 - Factory Stock		$88.63View Details
Published: 2020-05-28

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