單一 FET、MOSFET

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製造商零件編號
現有數量
價格
系列
包裝
產品狀態
FET 類型
技術
汲極至源極電壓 (Vdss)
電流 - 連續汲極 (Id) @ 25°C
驅動電壓 (最大值 Rds On、最小值 Rds On)
Rds On (最大值) @ Id、Vgs
Vgs(th) (最大值) @ Id
閘極電荷 (Qg) (最大值) @ Vgs
Vgs (最大值)
輸入電容 (Ciss) (最大值) @ Vds
FET 特點
功率耗散 (最大值)
工作溫度
等級
資格
安裝類型
供應商元件封裝
封裝/外殼
TL431BFDT-QR
MOSFET N-CH 60V 350MA TO236AB
Nexperia USA Inc.
283,483
庫存現貨
1 : $0.82000
切帶裝 (CT)
3,000 : $0.20938
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
350mA (Ta)
10V
1.6Ohm @ 500mA、10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
50 pF @ 10 V
-
370mW (Ta)
150°C (TJ)
汽車
AEC-Q101
表面黏著式
TO-236AB
TO-236-3、SC-59、SOT-23-3
183,120
庫存現貨
1 : $1.07000
切帶裝 (CT)
3,000 : $0.18425
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
200mA (Ta)
4.5V、10V
3.9Ohm @ 100mA、10V
2.1V @ 250µA
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
-
-
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
TL431BFDT-QR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
121,462
庫存現貨
1 : $1.07000
切帶裝 (CT)
3,000 : $0.21072
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
190mA (Ta)、300mA (Tc)
5V、10V
4.5Ohm @ 100mA、10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta)、1.33W (Tc)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
TO-236AB
TO-236-3、SC-59、SOT-23-3
338,394
庫存現貨
1 : $1.15000
切帶裝 (CT)
3,000 : $0.18425
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
400mA (Ta)
4.5V、10V
1.5Ohm @ 100mA、10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
-
-
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
SOT-23-3
MOSFET N-CH 50V 200MA SOT23-3
Diodes Incorporated
1,000,673
庫存現貨
1 : $1.23000
切帶裝 (CT)
3,000 : $0.24288
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA、10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
SOT-23-3
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
574,400
庫存現貨
1 : $1.23000
切帶裝 (CT)
3,000 : $0.20938
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
115mA (Ta)
5V、10V
7.5Ohm @ 50mA、5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
SOT 23-3
MOSFET N-CH 30V 500MA SOT23-3
onsemi
106,628
庫存現貨
1 : $1.23000
切帶裝 (CT)
10,000 : $0.34338
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
30 V
500mA (Ta)
2.5V、4V
1.5Ohm @ 10mA、4V
1.4V @ 250µA
1.15 nC @ 5 V
±20V
21 pF @ 5 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3 (TO-236)
TO-236-3、SC-59、SOT-23-3
PG-SOT23
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
51,017
庫存現貨
1 : $1.23000
切帶裝 (CT)
3,000 : $0.37688
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
100 V
190mA (Ta)
4.5V、10V
6Ohm @ 190mA、10V
1.8V @ 13µA
0.9 nC @ 10 V
±20V
20.9 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
汽車
AEC-Q101
表面黏著式
PG-SOT23
TO-236-3、SC-59、SOT-23-3
TL431BFDT-QR
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
322,983
庫存現貨
1 : $1.31000
切帶裝 (CT)
3,000 : $0.21776
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
不適用於新設計
N 通道
MOSFET (金氧)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA、10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
汽車
AEC-Q101
表面黏著式
TO-236AB
TO-236-3、SC-59、SOT-23-3
SOT 23-3
MOSFET P-CH 50V 130MA SOT23-3
onsemi
180,116
庫存現貨
480,000
原廠
1 : $1.31000
切帶裝 (CT)
3,000 : $0.46556
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
P 通道
MOSFET (金氧)
50 V
130mA (Ta)
5V
10Ohm @ 100mA、5V
2V @ 250µA
-
±20V
30 pF @ 5 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3 (TO-236)
TO-236-3、SC-59、SOT-23-3
SOT-23-3
MOSFET N-CH 60V 380MA SOT23-3
Diodes Incorporated
326,438
庫存現貨
1 : $1.40000
切帶裝 (CT)
3,000 : $0.25126
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
380mA (Ta)
5V、10V
2Ohm @ 500mA、10V
2.5V @ 1mA
0.3 nC @ 4.5 V
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
TL431BFDT-QR
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
227,447
庫存現貨
1 : $1.40000
切帶裝 (CT)
3,000 : $0.19285
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
360mA (Ta)
10V
1.6Ohm @ 300mA、10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)、1.14W (Tc)
-55°C ~ 150°C (TA)
汽車
AEC-Q101
表面黏著式
TO-236AB
TO-236-3、SC-59、SOT-23-3
SOT-23-3
MOSFET P-CH 50V 130MA SOT23-3
Diodes Incorporated
155,621
庫存現貨
16,113,000
原廠
1 : $1.40000
切帶裝 (CT)
3,000 : $0.31038
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
P 通道
MOSFET (金氧)
50 V
130mA (Ta)
5V
10Ohm @ 100mA、5V
2V @ 1mA
-
±20V
45 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
SOT-23-3
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
39,720
庫存現貨
1 : $1.40000
切帶裝 (CT)
3,000 : $0.40521
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
P 通道
MOSFET (金氧)
20 V
4.2 A (Ta)
1.8V、4.5V
52mOhm @ 4.2A、4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
TL431BFDT-QR
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
342,797
庫存現貨
1 : $1.48000
切帶裝 (CT)
3,000 : $0.20692
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
P 通道
MOSFET (金氧)
50 V
180mA (Ta)
10V
7.5Ohm @ 100mA、10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta)、1.14W (Tc)
-55°C ~ 150°C (TJ)
汽車
AEC-Q101
表面黏著式
TO-236AB
TO-236-3、SC-59、SOT-23-3
SOT 23-3
MOSFET N-CH 60V 260MA SOT23-3
onsemi
198,302
庫存現貨
1 : $1.48000
切帶裝 (CT)
3,000 : $0.25963
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
260mA (Ta)
4.5V、10V
2.5Ohm @ 240mA、10V
2.5V @ 250µA
0.81 nC @ 5 V
±20V
26.7 pF @ 25 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3 (TO-236)
TO-236-3、SC-59、SOT-23-3
93,863
庫存現貨
1 : $1.48000
切帶裝 (CT)
3,000 : $0.28476
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
50 V
220mA (Tj)
4.5V、10V
3.5Ohm @ 220mA、10V
1.5V @ 1mA
-
±20V
60 pF @ 25 V
-
350mW
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23
TO-236-3、SC-59、SOT-23-3
TL431BFDT-QR
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
54,620
庫存現貨
1 : $1.48000
切帶裝 (CT)
3,000 : $0.21776
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
300mA (Tc)
10V
5Ohm @ 500mA、10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Ta)
-65°C ~ 150°C (TJ)
-
-
表面黏著式
TO-236AB
TO-236-3、SC-59、SOT-23-3
SOT-23-3
MOSFET N-CH 20V 2.8A SOT23 T&R 3
Diodes Incorporated
462,092
庫存現貨
1 : $1.56000
切帶裝 (CT)
3,000 : $1.16678
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
20 V
2.8 A (Ta)
2.5V、4.5V
90mOhm @ 3.6A、4.5V
1V @ 250µA
2.8 nC @ 10 V
±12V
130 pF @ 10 V
-
660mW (Ta)
-55°C ~ 150°C (TJ)
汽車
AEC-Q101
表面黏著式
SOT-23-3
TO-236-3、SC-59、SOT-23-3
SOT-323
MOSFET N-CH 50V 360MA SOT323
Diodes Incorporated
139,252
庫存現貨
1 : $1.56000
切帶裝 (CT)
3,000 : $0.30151
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
50 V
360mA (Ta)
5V、10V
2Ohm @ 270mA、10V
1.5V @ 100µA
1.2 nC @ 10 V
±20V
45.8 pF @ 25 V
-
320mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-323
SC-70、SOT-323
SOT-323
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
122,711
庫存現貨
1 : $1.56000
切帶裝 (CT)
3,000 : $0.28476
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA、10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-323
SC-70、SOT-323
SOT 23-3
MOSFET N-CH 60V 320MA SOT23-3
onsemi
88,815
庫存現貨
1 : $1.56000
切帶裝 (CT)
3,000 : $0.28476
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
60 V
320mA (Ta)
4.5V、10V
1.6Ohm @ 500mA、10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SOT-23-3 (TO-236)
TO-236-3、SC-59、SOT-23-3
DTC114YEBTL
MOSFET N-CH 20V 200MA EMT3F
Rohm Semiconductor
100,658
庫存現貨
1 : $1.64000
切帶裝 (CT)
3,000 : $0.22613
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
20 V
200mA (Ta)
1.2V、2.5V
1.2Ohm @ 100mA、2.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
-
-
表面黏著式
EMT3F (SOT-416FL)
SC-89、SOT-490
SC-75
MOSFET N-CH 30V 154MA SC75
onsemi
88,317
庫存現貨
1 : $1.72000
切帶裝 (CT)
3,000 : $0.35176
編帶和捲軸封裝 (TR)
-
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
有源
N 通道
MOSFET (金氧)
30 V
154mA (Tj)
2.5V、4.5V
7Ohm @ 154mA、4.5V
1.5V @ 100µA
-
±10V
20 pF @ 5 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
SC-75、SOT-416
SC-75、SOT-416
TL431BFDT-QR
MOSFET N-CH 100V 150MA TO236AB
Nexperia USA Inc.
74,141
庫存現貨
1 : $1.72000
切帶裝 (CT)
3,000 : $0.27638
編帶和捲軸封裝 (TR)
編帶和捲軸封裝 (TR)
切帶裝 (CT)
Digi-Reel®
不適用於新設計
N 通道
MOSFET (金氧)
100 V
150mA (Ta)
10V
6Ohm @ 120mA、10V
2.8V @ 1mA
-
±20V
40 pF @ 25 V
-
250mW (Ta)
-55°C ~ 150°C (TJ)
-
-
表面黏著式
TO-236AB
TO-236-3、SC-59、SOT-23-3
顯示
/ 43,901

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.