設計資源

Transphorm 引領 GaN 的革新，提供最高效能、最高可靠性的 GaN 裝置，非常適合高電壓電源轉換應用。提供一系列工具與資源，可協助進行 GaN 應用的設計。

評估套件

零件編號	說明	查看詳情
TDTTP2500P100-KIT-ND	2.5KW TOTEM-POLE PFC EVAL KIT	查看詳情
TDTTP4000W066B-KIT-ND	4KW TOTEM-POLE PFC EVAL KIT	查看詳情
TDINV1000P100-KIT-ND	1KW INVERTER EVALUATION KIT	查看詳情
TDINV3000W050-KIT	3.0KW INVERTER EVAL KIT	查看詳情
TDINV3500P100-KIT-ND	3.5KW INVERTER EVAL KIT	查看詳情
TDHBG2500P100-KIT-ND	2.5KW HB, BUCK OR BOOST EVAL KIT	查看詳情

應用說明

AN0002：Transphorm GaN 功率 FET 的特性

AN0003：GaN FET 的印刷電路板佈局與探測

AN0004：使用 GaN 設計硬切換橋接器

AN0006：Transphorm GaN FET 的 VGS 暫態容差

AN0007：氣相迴流的 PQFN88 無鉛二階焊接建議

AN0008：GaN FET 的汲極電壓與突崩額定值

AN0009：建議用於 Transphorm GaN FET 的外部電路

AN0010：並聯 GaN FET 使用汲極鐵氧體磁珠與 RC 緩衝器達到高功率應用

AN0011：PQFN GaN FET 並聯 PCB 應用說明

設計指南

DG004 DSP 代碼

DG005：原型開發用的超快速過電流斷路器

DG005 設計檔案

DG006：使用 GaN FET 的 600 W DC 轉 DC LLC 設計

DG006 設計檔案

Spice 模型 (依零件編號排序)

閱讀詳細探討 GaN 設計相關主題的技術論文

Barr, R., Haller, J., Shono, K., Georgieva, E., McKay, J., Smith, P., Smith, K., Rakesh, L., Yifeng, Y., High Voltage GaN Switch Reliability, Nov 2018

Parikh, Primit; Smith, Kurt; Barr, Ronald; et al., 650 Volt GaN Commercialization Reaches Automotive Standards, ECS Transactions, September 2017

Parikh, Primit, Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors [Expert View], IEEE Power Electronics Magazine, September, 2017

Huang, Zan; Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017

Zuk, Philip; Campeau, Gaetan, How to Design with GaN in Under an Hour, APEC 2017 Exhibitor Session, March 2017

Smith, Kurt; Barr, Ronald, Reliability Lifecycle of GaN Power Devices, white paper, March 2017

Wang, Zhan; Wu, Yifeng, 99% Efficiency True-Bridgeless Totem-Pole PFC Based on GaN HEMTs

Wang, Zhan; Honea, Jim; Wu, Yifeng, Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs, May 2015 (requires IEEE access)

Zhou, Liang; Wu, Yifeng; Honea, Jim; Wang, Zhan, High-efficiency True Bridgeless Totem Pole PFC based on GaN HEMT: Design Challenges and Cost-effective Solutions, May 2015 (requires IEEE access)

Wang, Zhan; Wu, Yifeng; Honea, Jim; Zhou, Liang, Paralleling GaN HEMTs for diode-free bridge power converters, Mar 2015

Kikkawa, T., et al, 600V JEDEC-qualified Highly-reliable GaN HEMTs on Si Substrates, Dec 2014 (requires IEEE access)

Wu, Yifeng; Guerrero, Jose; McKay, Jim; Smith, Kurt, Advances in reliability and operation space of high-voltage GaN power devices on Si substrates, Oct 2014 (requires IEEE access)

Wang, Zhan; Honea, Jim; Yuxiang Shi; Hui Li, Investigation of driver circuits for GaN HEMTs in leaded packages, Oct 2014

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, B., kV-class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800V and 100kHz, June 2014 (requires IEEE access)

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; McKay, J.; Barr, R.; Birkhahn, R., Performance and Robustness of First Generation 600V GaN-on-Si Power Transistors, Oct 2013 (requires IEEE access)

Parikh, Primit; Wu, Yifeng; Shen, Likun, Commercialization of High 600V GaN-on-Silicon Power Devices, May 2013 (requires IEEE access)

Wu, Yifeng, GaN Offers Advantages to Future HEV, March 2013

Wu, Y.; Kebort, D.; Guerrero, J.; Yea, S.; Honea, J.; Shirabe, K.; Kang, J., High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output, Oct 2012

Shirabe, Kohei; Swamy, Mahesh; Kang, Jun-Koo; Hisatsune, Masaki; Wu, Yifeng; Kebort, Don; Honea, Jim, Advantages of High-frequency PWM in AC Motor Drive Applications, Sept 2012 (requires IEEE access)

Wu, Y.; Coffie, R.; Fichtenbaum, N.; Dora, Y.; Suh, C.S.; Shen, L.; Parikh, P.; Mishra, U.K., Total GaN solution to electrical power conversion, Jun 2011 (requires IEEE access)