Product Highlights > Design Resources

Design Resources

Transphorm leads the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. An array of tools and resources are available to assist with GaN application design.

Evaluation Kits

Part Number	Description	View Details
TDTTP2500P100-KIT-ND	2.5KW TOTEM-POLE PFC EVAL KIT	View Details
TDTTP4000W066B-KIT-ND	4KW TOTEM-POLE PFC EVAL KIT	View Details
TDINV1000P100-KIT-ND	1KW INVERTER EVALUATION KIT	View Details
TDINV3000W050-KIT	3.0KW INVERTER EVAL KIT	View Details
TDINV3500P100-KIT-ND	3.5KW INVERTER EVAL KIT	View Details
TDHBG2500P100-KIT-ND	2.5KW HB, BUCK OR BOOST EVAL KIT	View Details
TDHBG1200DC100-KIT	1.2KW HB, BUCK OR BOOST EVAL KIT	View Details
TDHB-65H070L-DC	DAUGHTER CARD USED IN 1.2KW HB, BUCK OR BOOST EVAL KIT	View Details

App Notes

AN0002: Characteristics of Transphorm GaN Power FETs

AN0003: Printed Circuit Board Layout and Probing for GaN FETs

AN0004: Designing Hard-switched Bridges with GaN

AN0006: VGS Transient Tolerance of Transphorm GaN FETs

AN0007: PQFN88 Lead-free 2nd Level Soldering Recommendations for Vapor Phase Reflow

AN0008: Drain Voltage and Avalanche Ratings for GaN FETs

AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications

AN0011: PQFN GaN FETs Paralleling PCB Application Note

Design Guides

DG004 DSP Code

DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping

DG005 Design Files

DG006: 600W DC to DC LLC Design Using GaN FETs

DG006 Design Files

Spice Models by Part Number

Review technical papers detailing a variety of subjects related to designing with GaN

Zhan Wang, Yifeng Wu, Jim Honea, Liang Zhou, Paralleling GaN HEMTs for Diode-free Bridge Power Converters, Dec 2018

Barr, R., Haller, J., Shono, K., Georgieva, E., McKay, J., Smith, P., Smith, K., Rakesh, L., Yifeng, Y., High Voltage GaN Switch Reliability, Nov 2018

P. Parikha, Y. Wua, L. Shena, R. Barra, S. Chowdhurya, J. Grittersa, S. Yea a, P. Smitha, L. McCarthya, R. Birkhahna, M. Moorea, J. McKaya, H. Clementa, U. Mishraa, R. Lala, P. Zuka, T. Hosodab, K. Shonob, K. Imanishib, Y. Asaib, GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges, Aug 2018

Parikh, Primit; Smith, Kurt; Barr, Ronald; et al., 650 Volt GaN Commercialization Reaches Automotive Standards, ECS Transactions, September 2017

Parikh, Primit, Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors [Expert View], IEEE Power Electronics Magazine, September, 2017

Huang, Zan; Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017

Zuk, Philip; Campeau, Gaetan, How to Design with GaN in Under an Hour, APEC 2017 Exhibitor Session, March 2017

Smith, Kurt; Barr, Ronald, Reliability Lifecycle of GaN Power Devices, white paper, March 2017

Wang, Zhan; Wu, Yifeng, 99% Efficiency True-Bridgeless Totem-Pole PFC Based on GaN HEMTs

Wang, Zhan; Honea, Jim; Wu, Yifeng, Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs, May 2015 (requires IEEE access)

Zhou, Liang; Wu, Yifeng; Honea, Jim; Wang, Zhan, High-efficiency True Bridgeless Totem Pole PFC based on GaN HEMT: Design Challenges and Cost-effective Solutions, May 2015 (requires IEEE access)

Wang, Zhan; Wu, Yifeng; Honea, Jim; Zhou, Liang, Paralleling GaN HEMTs for diode-free bridge power converters, Mar 2015

Kikkawa, T., et al, 600V JEDEC-qualified Highly-reliable GaN HEMTs on Si Substrates, Dec 2014 (requires IEEE access)

Wu, Yifeng; Guerrero, Jose; McKay, Jim; Smith, Kurt, Advances in reliability and operation space of high-voltage GaN power devices on Si substrates, Oct 2014 (requires IEEE access)

Wang, Zhan; Honea, Jim; Yuxiang Shi; Hui Li, Investigation of driver circuits for GaN HEMTs in leaded packages, Oct 2014

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, B., kV-class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800V and 100kHz, June 2014 (requires IEEE access)

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; McKay, J.; Barr, R.; Birkhahn, R., Performance and Robustness of First Generation 600V GaN-on-Si Power Transistors, Oct 2013 (requires IEEE access)

Parikh, Primit; Wu, Yifeng; Shen, Likun, Commercialization of High 600V GaN-on-Silicon Power Devices, May 2013 (requires IEEE access)

Wu, Yifeng, GaN Offers Advantages to Future HEV, March 2013

Wu, Y.; Kebort, D.; Guerrero, J.; Yea, S.; Honea, J.; Shirabe, K.; Kang, J., High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output, Oct 2012

Shirabe, Kohei; Swamy, Mahesh; Kang, Jun-Koo; Hisatsune, Masaki; Wu, Yifeng; Kebort, Don; Honea, Jim, Advantages of High-frequency PWM in AC Motor Drive Applications, Sept 2012 (requires IEEE access)

Wu, Y.; Coffie, R.; Fichtenbaum, N.; Dora, Y.; Suh, C.S.; Shen, L.; Parikh, P.; Mishra, U.K., Total GaN solution to electrical power conversion, Jun 2011 (requires IEEE access)