FGA20S140P Single IGBT

Ranging from 1,100 V to 1,400 V, the onsemi FGA20S140P is optimized with intrinsic anti-parallel diodes for soft switching applications. With advancements over the typical non-punch-through (NPT) IGBT technology, onsemi shorted-anode silicon technology offers a lower saturation voltage of over 12 percent less than the same rating NPT-trench IGBT. Additionally, when compared to the competitor's IGBT offerings, this product family offers a lower tail-current rate of over 20 percent. These rich features allow onsemi advanced IGBTs to provide better thermal performance, higher efficiency, and reduced power losses.