EPC9001: 15A @ 0 ~ 40V, Half Bridge

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2015 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9001 development board is 2" x 1.5" and contains not only two EPC2015 eGaN FET in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.