GE Aerospace

GE12047CCA3 1200V SiC Half-Bridge
1200V 475A SiC half-bridge module with best-in-class power density for very fast switching.

GE17042CCA3 1700V SiC Half-Bridge
1700V 425A SiC half-bridge module with best-in-class power density for very fast switching.

GE17080CDA3 1700V SiC Half-Bridge
1700V 765A SiC half-bridge module with 10nH inductance for high power applications.

GE12160CEA3 1200V SiC Half-Bridge
1200V 1425A SiC half-bridge module for high power best-in-class power density for fast switching.

GE12050EEA3 1200V SiC 6-Pack
1200V 475A SiC 3-phase/6-Pack module with best-in-class power density for fast switching.
關於 GE Aerospace
GE Aerospace is a leader in SiC technology development for nearly two decades. From chip design and component engineering to full system implementation, GE offers class-leading performance in power devices, advanced packaging, and power electronics applications. GE is the industry’s first -55 to 200˚C MOSFET.