Coming to the question, when is it best to recommend a SiGe rectifier? Whenever a rectifier in the voltage range between 100V – 200V is required, design engineers usually think of the two basic and known technologies. Depending on the voltage range, Schottky rectifiers are used below a reverse voltage of 100 V, sometimes up to 150 V and Recovery rectifiers are used starting from 200 V. If the efficiency of a Schottky rectifier is desired, but the application requires additional parameters, like low reverse leakage currents or an extended safe operating area, then recommending a SiGe device is a good choice. Suppose these highlighted values are not required, in the sense that the application will only operate in a moderate temperature environment. In that case, it is sufficient to use a Schottky device. The second path of this diagram targets the area in which Recovery Rectifiers are used. Compared with this technology, SiGe increases the efficiency of the system in terms of the parameter VF. In relation to the dynamic parameters of the diode, such as the reverse recovery behavior, it can be noted that the SiGe device is very smooth in switching. The switching time depends on the specified maximum reverse voltage and the thickness of the epitaxial SiGe layer. That‘s why the advantages rather come into effect if the voltage is below 200V.