Texas Instruments' LM5113 is designed to drive both the high-side and the low-side enhancement mode gallium nitride (GaN) FETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.
In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard 10-pin WSON package and a 12-bump DSBGA package. The 10-pin WSON package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.
| Features |
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- Independent high-side and low-side TTL logic inputs
- 1.2 A/5 A peak source/sink current
- High-side floating bias voltage rail operates up to 100 VDC
- Internal bootstrap supply voltage clamping
- Split outputs for adjustable turn-on/turn-off strength
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- 0.6 Ω/2.1 Ω pull-down/pull-up resistance
- Fast propagation times (28 ns typical)
- Excellent propagation delay matching (1.5 ns typical)
- Supply rail undervoltage lockout
- Low power consumption
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| Applications |
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- Current-fed push-pull converters
- Half- and full-bridge converters
- Synchronous buck converters
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- Two-switch forward converters
- Forward with active clamp converters
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Texas Instruments' LM5113 is designed to drive both the high-side and the low-side enhancement mode gallium nitride (GaN) FETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.
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