LMG1025-Q1 Automotive Single-Channel Gate Driver

Texas Instruments' LMG1025-Q1 single-channel, low-side enhancement-mode GaN FET and logic-level MOSFET driver is designed for high switching frequency automotive applications. The device offers narrow pulse width capability, fast switching specification, and small pulse distortion to significantly enhance LiDAR, ToF, and power converter performance. The 1.25 ns output pulse width enables more powerful, eye-safe diode pulses. These pulses combined with 300 ns distortion, lead to longer-range and precise LiDAR/ToF systems. The driver offers a 2.9 ns propagation delay which significantly improves the control loop response time and overall performance of the power converters. The split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The MOSFET driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. The LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive-qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.