LMG3410R050/LMG3411R050 600 V GaN FET Power Stages

Texas Instruments' LMG3410R050 and LMG3411R050 GaN power stages with integrated driver and protection enable designers to achieve higher levels of power density and efficiency in power electronics systems. The devices offer inherent advantages over silicon MOSFETs including ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies such as the totem-pole PFC.

The LMG3410R050 and LMG3411R050 provide a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability, and optimize the performance of any power supply. An integrated gate drive enables 100 V/ns switching with near-zero V_DS ringing, less than 100 ns current-limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.