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Full-SiC Half-Bridge Power Modules
ROHM's SiC power modules integrate SiC MOSFETs and SBDs in an industrial standard package
ROHM Semiconductor's full-SiC half-bridge power modules integrate SiC MOSFETs and SBDs in a standard industrial package. An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for full-SiC power modules.
- Low-stray inductance
- High-speed recovery characteristics
- Low-switching losses
- No derating necessary compared to IGBT
- Renewable energy/energy storage
- EV/HEV inverter and chargers
- Induction heating/welding
- HVDC
Full-SiC Half-Bridge Power Modules
| Image | Manufacturer Part Number | Description | Available Quantity | Price | ||
|---|---|---|---|---|---|---|
 |  | BSM120D12P2C005 | MOSFET 2N-CH 1200V 120A MODULE | 4 - Immediate | $3,027.48 | View Details |
|  | BSM180D12P3C007 | MOSFET 2N-CH 1200V 180A MODULE | 13 - Immediate | $4,636.76 | View Details |
|  | BSM300D12P2E001 | MOSFET 2N-CH 1200V 300A MODULE | 0 - Immediate | $5,848.42 | View Details |
|  | BSM250D17P2E004 | MOSFET 2N-CH 1700V 250A MODULE | 6 - Immediate | $8,100.29 | View Details |
| | BSM080D12P2C008 | MOSFET 2N-CH 1200V 80A MODULE | 0 - Immediate | $2,623.87 | View Details |
| | BSM180D12P2C101 | MOSFET 2N-CH 1200V 204A MODULE | 1 - Immediate | $3,678.06 | View Details |
|  | BSM180C12P2E202 | SICFET N-CH 1200V 204A MODULE | 0 - Immediate | $5,384.06 | View Details |
|  | BSM400C12P3G202 | SICFET N-CH 1200V 400A MODULE | 4 - Immediate | $7,864.61 | View Details |
| | BSM600C12P3G201 | SICFET N-CH 1200V 600A MODULE | 0 - Immediate | $9,878.40 | View Details |
Updated: 2019-04-23
Published: 2014-05-09
Hong Kong, China