Name: BSM600C12P3G201
Brand: Rohm Semiconductor
SKU: BSM600C12P3G201-ND
Price: 9878.4 HKD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSM600C12P3G201
DigiKey Part Number	BSM600C12P3G201-ND
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	BSM600C12P3G201
Description	SICFET N-CH 1200V 600A MODULE
Customer Reference
Detailed Description	N-Channel 1200 V 600A (Tc) 2460W (Tc) Chassis Mount Module
Datasheet	Datasheet
EDA/CAD Models	BSM600C12P3G201 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tray
Part Status	Not For New Designs
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	600A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 182mA
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2460W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module
Base Product Number	BSM600

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Available To Order

This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.

Not recommended for new design, minimums may apply

Quantity

All prices are in HKD

Tray