BSM120D12P2C005
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BSM120D12P2C005
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
ROHM's SiC Power and Gate Driver Solutions

BSM120D12P2C005

DigiKey Part Number
BSM120D12P2C005-ND
Manufacturer
Manufacturer Product Number
BSM120D12P2C005
Description
MOSFET 2N-CH 1200V 120A MODULE
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
Mosfet Array 1200V (1.2kV) 120A (Tc) 780W Module
Datasheet
 Datasheet
EDA/CAD Models
BSM120D12P2C005 Models
Product Attributes
Type
Description
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Category
Manufacturer
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Power - Max
780W
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
Base Product Number
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All prices are in HKD
Bulk
QuantityUnit PriceExt Price
1$3,027.48000$3,027.48