Name: BSM180C12P2E202
Brand: Rohm Semiconductor
SKU: BSM180C12P2E202-ND
Price: 5384.06 HKD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSM180C12P2E202
DigiKey Part Number	BSM180C12P2E202-ND
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	BSM180C12P2E202
Description	SICFET N-CH 1200V 204A MODULE
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 204A (Tc) 1360W (Tc) Chassis Mount Module
Datasheet	Datasheet
EDA/CAD Models	BSM180C12P2E202 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tray
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 35.2mA
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1360W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module
Base Product Number	BSM180