Single FETs, MOSFETs

Results: 14
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFUSCD20120B
LSIC1MO170E0750
SICFET N-CH 1700V 750OHM TO247-3
Littelfuse Inc.
1,411
In Stock
1 : $76.64000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6.2A (Tc)
20V
1Ohm @ 2A, 20V
4V @ 1mA
13 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LFUSCD20120B
LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3
Littelfuse Inc.
370
In Stock
1 : $157.31000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
95 nC @ 20 V
+22V, -6V
1825 pF @ 800 V
-
179W (Tc)
-55°C ~ 150°C
-
-
Through Hole
TO-247AD
TO-247-3
LFUSCD20120B
LSIC1MO120E0160
SICFET N-CH 1200V 22A TO247-3
Littelfuse Inc.
2,229
In Stock
2,250
Factory
1 : $115.33000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
20V
200mOhm @ 10A, 20V
4V @ 5mA
57 nC @ 20 V
+22V, -6V
870 pF @ 800 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LSIC1MO170TO750_TO-263-7L_1
LSIC1MO170T0750
SICFET N-CH 1700V 6.4A TO263-7L
Littelfuse Inc.
873
In Stock
1 : $74.33000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6.4A (Tc)
20V
1Ohm @ 2A, 20V
4V @ 1mA
11 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
LSIC1MO120G0160
LSIC1MO120G0040
MOSFET SIC 1200V 50A TO247-4L
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : $253.63000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
70A (Tc)
20V
50mOhm @ 40A, 20V
4V @ 20mA
175 nC @ 20 V
+22V, -6V
317 pF @ 800 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LFUSCD20120B
LSIC1MO170E1000
SICFET N-CH 1700V 5A TO247-3L
Littelfuse Inc.
0
In Stock
450 : $29.20311
Tube
-
Tube
Obsolete
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
15V, 20V
1Ohm @ 2A, 20V
4V @ 1mA
15 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LFUSCD20120B
LSIC1MO120E0120
SICFET N-CH 1200V 27A TO247-3
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
27A (Tc)
20V
150mOhm @ 14A, 20V
4V @ 7mA
80 nC @ 20 V
+22V, -6V
1125 pF @ 800 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD
TO-247-3
LSIC1MO120G0160
LSIC1MO120G0120
MOSFET SIC 1200V 18A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
27A (Tc)
20V
150mOhm @ 14A, 20V
4V @ 7mA
63 nC @ 20 V
+22V, -6V
1130 pF @ 800 V
-
156W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
LSIC1MO120G0025
MOSFET SIC 1200V 70A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
20V
32mOhm @ 50A, 20V
4V @ 30mA
265 nC @ 20 V
+22V, -6V
495 pF @ 800 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
LSIC1MO120G0080
MOSFET SIC 1200V 25A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
92 nC @ 20 V
+22V, -6V
170 pF @ 800 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
LSIC1MO120G0160
LSIC1MO120G0160
MOSFET SIC 1200V 14A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
20V
200mOhm @ 10A, 20V
4V @ 5mA
50 nC @ 20 V
+22V, -6V
890 pF @ 800 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-263-7
LSIC1MO120T0120-TU
1200V/120MOHM SIC MOSFET TO-263-
IXYS
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
27A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
LSIC1MO120T0160-TU
1200V/160MOHM SIC MOSFET TO-263-
IXYS
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
LSIC1MO120T0080-TU
1200V/80MOHM SIC MOSFET TO-263-7
IXYS
0
In Stock
Active
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.