Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
LSIC1MO170E0750 SICFET N-CH 1700V 750OHM TO247-3 Littelfuse Inc.	391 In Stock	1 : $67.72000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	6.2A (Tc)	20V	1Ohm @ 2A, 20V	4V @ 1mA	13 nC @ 20 V	+22V, -6V	200 pF @ 1000 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
LSIC1MO120E0160 SICFET N-CH 1200V 22A TO247-3 Littelfuse Inc.	2,221 In Stock 1,350 Factory	1 : $96.19000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	20V	200mOhm @ 10A, 20V	4V @ 5mA	57 nC @ 20 V	+22V, -6V	870 pF @ 800 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
LSIC1MO120E0080 SICFET N-CH 1200V 39A TO247-3 Littelfuse Inc.	369 In Stock	1 : $148.08000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	39A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	95 nC @ 20 V	+22V, -6V	1825 pF @ 800 V	-	179W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247AD	TO-247-3
LSIC1MO170T0750 SICFET N-CH 1700V 6.4A TO263-7L Littelfuse Inc.	873 In Stock	1 : $79.79000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	6.4A (Tc)	20V	1Ohm @ 2A, 20V	4V @ 1mA	11 nC @ 20 V	+22V, -6V	200 pF @ 1000 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7L	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
LSIC1MO120G0040 MOSFET SIC 1200V 50A TO247-4L Littelfuse Inc.	0 In Stock Check Lead Time	1 : $228.60000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	70A (Tc)	20V	50mOhm @ 40A, 20V	4V @ 20mA	175 nC @ 20 V	+22V, -6V	317 pF @ 800 V	-	357W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
LSIC1MO170E1000 SICFET N-CH 1700V 5A TO247-3L Littelfuse Inc.	0 In Stock	450 : $28.94238 Tube	-	Tube	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1700 V	5A (Tc)	15V, 20V	1Ohm @ 2A, 20V	4V @ 1mA	15 nC @ 20 V	+22V, -6V	200 pF @ 1000 V	-	54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
LSIC1MO120E0120 SICFET N-CH 1200V 27A TO247-3 Littelfuse Inc.	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	27A (Tc)	20V	150mOhm @ 14A, 20V	4V @ 7mA	80 nC @ 20 V	+22V, -6V	1125 pF @ 800 V	-	139W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
LSIC1MO120G0120 MOSFET SIC 1200V 18A TO247-4L Littelfuse Inc.	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	27A (Tc)	20V	150mOhm @ 14A, 20V	4V @ 7mA	63 nC @ 20 V	+22V, -6V	1130 pF @ 800 V	-	156W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
LSIC1MO120G0025 MOSFET SIC 1200V 70A TO247-4L Littelfuse Inc.	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	20V	32mOhm @ 50A, 20V	4V @ 30mA	265 nC @ 20 V	+22V, -6V	495 pF @ 800 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
LSIC1MO120G0080 MOSFET SIC 1200V 25A TO247-4L Littelfuse Inc.	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	39A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	92 nC @ 20 V	+22V, -6V	170 pF @ 800 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
LSIC1MO120G0160 MOSFET SIC 1200V 14A TO247-4L Littelfuse Inc.	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	20V	200mOhm @ 10A, 20V	4V @ 5mA	50 nC @ 20 V	+22V, -6V	890 pF @ 800 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
LSIC1MO120T0120-TU 1200V/120MOHM SIC MOSFET TO-263- IXYS	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	27A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
LSIC1MO120T0160-TU 1200V/160MOHM SIC MOSFET TO-263- IXYS	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
LSIC1MO120T0080-TU 1200V/80MOHM SIC MOSFET TO-263-7 IXYS	0 In Stock	Active	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	39A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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