onsemi

1700 V EliteSiC Diodes

onsemi‘s diodes have temperature independent switching characteristics and excellent thermal performance

Image of onsemi's 1700 V Silicon Carbide (SiC) Diodesonsemi‘s 1700 V EliteSiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Features
  • Ease of paralleling
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable
Applications
  • Automotive HEV-EV DC-DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

1700 V EliteSiC Diodes

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
DIODE SIL CARB 1700V 25A TO2472NDSH25170ADIODE SIL CARB 1700V 25A TO24720 - Immediate$144.39View Details

Other Wide Bandgap Solutions

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SICFET N-CH 1200V 44A TO247-3NTHL080N120SC1SICFET N-CH 1200V 44A TO247-30 - ImmediateSee Page for PricingView Details
DIODE SIC 1.2KV 22.5A TO252AAFFSD08120ADIODE SIC 1.2KV 22.5A TO252AA3165 - Immediate$46.59View Details
DGTL ISO 5KV 1CH GATE DVR 16SOICNCD57001DWR2GDGTL ISO 5KV 1CH GATE DVR 16SOIC1243 - Immediate$50.13View Details
DIODE SIL CARBIDE 650V 8A TO263FFSB0665BDIODE SIL CARBIDE 650V 8A TO263627 - Immediate$24.78View Details
IC GATE DRVR LOW-SIDE 24QFNNCP51705MNTXGIC GATE DRVR LOW-SIDE 24QFN967 - Immediate$47.09View Details
Published: 2020-04-02

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