onsemi Wide Bandgap

High Efficiency and Intelligent Power Solutions

onsemi facilitates a full WBG ecosystem for their customers by providing patented termination structures which provides superior robustness for harsh environmental conditions. The wide range of power components allows customers to choose the power topology best fitting the size, cost and efficiency constraints of each design. The new 1200 V EliteSiC diode family minimizes conduction and switching losses, and the 1200 V M3S MOSFETs provide up to 20% power loss reduction in hard switching applications. Our full EliteSiC and hybrid EliteSiC module options are optimized for superior performance with easy to mount packages to fit industry standard pinouts. From internal manufacturing to physical device models for simulation, onsemi ensures reliability for all silicon carbide (SiC) devices including discretes and modules.

Silicon Carbide (SiC) Technology Benefits

  • EliteSiC devices have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy band gap, and 3x higher thermal conductivity compared to Silicon devices.

 

High Reliability

  • onsemi EliteSiC devices have a patented termination structure which provides superior robustness for harsh environmental conditions
  • H3TRB Testing (High Temp/Humidity/Bias), 85C/85% RH/85% V (960 V)

Ruggedness

  • EliteSiC Diodes Ruggedness – Surge and Avalanche

Robustness

  • onsemi Schottky Barrier EliteSiC Diodes always maintain the best-in-class behavior in regards to leakage
  • H3TRB Testing (High Temp/Humidity/Bias), 85C/85% RH/85% V (960 V)

 

Wide Bandgap Technologies

Wide Bandgap Technologies

 

650 V EliteSiC MOSFETs

onsemi 650V EliteSiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

  • Low RDSon
  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • AEC−Q101 Variants available

Applications

  • DC-DC Converter
  • Boost Inverter
  • Automotive DC/DC
  • Automotive PFC

End Products

  • UPS
  • Solar
  • Power Supply
  • Automotive On Board Charger
  • Automotive DC/DC converter for EV/PHEV

650 V EliteSiC MOSFETs

Manufacturer Part Number Description View Details
NTBG015N065SC1 EliteSiC MOSFET, NCHANNEL, 650V View Details
NTBG045N065SC1 EliteSiC MOSFET, NCHANNEL, 650V View Details
NTH4L015N065SC1 EliteSiC MOSFET, NCHANNEL, 650V View Details
NTH4L045N065SC1 EliteSiC MOSFET, NCHANNEL, 650V View Details
NTH4L015N065SC1 EliteSiC MOSFET, NCHANNEL, 650V View Details

900 V EliteSiC MOSFETs

onsemi 900V EliteSiC MOSFETs

Silicon Carbide (SiC) MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

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Features

  • 900 V rated
  • Low ON resistance
  • Compact chip size ensures low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV charging
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Network power supplies
  • Server power supplies

900 V EliteSiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N090SC1 EliteSiC MOSFET, NCHANNEL, 900V, 9.8A/112A View Details
NTHL020N090SC1 EliteSiC MOSFET, NCHANNEL, 900V, 118A View Details
NTHL060N090SC1 EliteSiC MOSFET, NCHANNEL, 900V, 46A View Details
NVBG020N090SC1 EliteSiC MOSFET, NCHANNEL, 900V, 9.8A/112A View Details
NVHL020N090SC1 EliteSiC MOSFET, NCHANNEL, 900V, 118A View Details

M3S 1200 V EliteSiC MOSFETs

onsemi 1200V EliteSiC MOSFET

The new family of 1200 V M3S planar silicon carbide (SiC) MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18 V gate drive but also works well with 15 V gate drive.

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Features

  • TO247-4LD package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

Benefits

  • Reduced EON losses
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

Applications

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion

End Products

  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems

1200 V EliteSiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N120SC1 EliteSiCFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 EliteSiCFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 EliteSiCFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 EliteSiCFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 EliteSiCFET N-CH 1200V 44A TO247-3 View Details

650 V EliteSiC Diodes

650V EliteSiC Diode

onsemi's silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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Features

  • Easy to parallel
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Benefits

  • Automotive HEV-EV DC/DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

650 V EliteSiC Diodes

Manufacturer Part Number Description View Details
FFSB0665B EliteSiC, 650V, 6A SBD GEN1.5 View Details
FFSB0865B EliteSiC, 650V, 8A SBD GEN1.5 View Details
FFSP08120A EliteSiC DIODE SCHOTTKY, 1.2KV, 8A View Details
FFSP10120A EliteSiC DIODE SCHOTTKY, 1.2KV, 10A View Details
FFSP15120A EliteSiC DIODE SCHOTTKY, 1.2KV, 15A View Details
FFSH20120A EliteSiC DIODE SCHOTTKY, 1.2KV, 30A View Details
FFSP3065A EliteSiC DIODE SCHOTTKY, 650V, 30A View Details
FFSM0665A EliteSiC, 650V, 6A SBD View Details
FFSD1065A EliteSiC, 650V, 10A SBD View Details
FFSB1065B-F085 EliteSiC, 650V, 10A SBD GEN1.5 View Details
FFSB2065B-F085 EliteSiC DIODE, 650V View Details
FFSM1265A EliteSiC, 650V, 12A SIC SBD View Details
FFSD08120A EliteSiC, 1200V, 8A SIC SBD View Details
FFSD10120A EliteSiC DIODE SCHOTTKY, 1.2KV View Details
FFSD1065B-F085 EliteSiC, 650V, 10A SBD GEN1.5 View Details
FFSB3065B-F085 EliteSiC, 650V, 30A SBD GEN1.5 View Details
FFSB10120A-F085 EliteSiC, 1200V, 10A AUTOMOTIVE SBD View Details
FFSB20120A-F085 EliteSiC, 1200V, 20A AUTOMOTIVE SBD View Details
FFSP05120A EliteSiC DIODE SCHOTTKY, 1.2KV View Details
FFSP20120A EliteSiC DIODE SCHOTTKY, 1200V, 20A View Details

1200 V EliteSiC Diodes

1200V EliteSiC Diode

onsemi's 1200 V silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

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Features

  • 1200 V rated
  • Low ON resistance
  • Compact chip size ensure low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV chargers
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Solar inverters
  • Network power supplies
  • Server power supplies

1200 V EliteSiC Diodes

Manufacturer Part Number Description View Details
NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details

1700 V EliteSiC Diodes

1700V EliteSiC Diode

onsemi‘s 1700 V silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set EliteSiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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Features

  • Ease of paralleling
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Applications

  • Automotive HEV-EV DC-DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

1700V EliteSiC Diodes

Manufacturer Part Number Description View Details
NDSH25170A EliteSiC JBS, 1700V, 25A View Details

Silicon Carbide (SiC) Drivers

EliteSiC Drivers

onsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive EliteSiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the EliteSiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

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Features

  • High peak output current with split output stages
  • Extended positive voltage rating up to 28 V max
  • User-adjustable built-in negative charge pump (-3.3 V to -8 V)
  • Accessible 5 V reference/bias rail
  • Adjustable undervoltage lockout
  • Fast desaturation function
  • QFN24 package 4 mm x 4 mm
  • Allow independent on/off adjustment
  • Efficient EliteSiC MOSFET operation during the conduction period
  • Fast turn-off and robust dv/dt immunity
  • Minimize complexity of bias supply in isolated gate drive applications
  • Sufficient VGS amplitude to match EliteSiC best performance
  • Self-protection of the design
  • Small and low parasitic inductance package

Applications

  • High-performance inverters
  • High-power motor drivers
  • Totem pole PFCs
  • Industrial and motor drivers
  • UPS and solar inverters
  • High-power DC chargers

Silicon Carbide (SiC) Drivers

Manufacturer Part Number Description View Details
NCP51705MNTXG IC GATE DRVR LOW-SIDE 24QFN View Details
NCV51705MNTWG IC GATE DRVR LOW-SIDE 24QFN View Details

Isolated High Current Gate Drivers

Isolated High Current Gate Driver

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and EliteSiC MOSFET inverting and non-inverting drivers ideal for switching applications.

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Isolated High Current Gate Drivers

Manufacturer Part Number Description View Details
NCD57000DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCD57001DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCV57001DWR2G IC IGBT GATE DRIVER View Details
NCV57000DWR2G IC IGBT GATE DRIVER View Details

NCP51810: High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

QFN15-485FN

The NCP51810 and NCP51820 high-speed gate drivers are designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) (NCP51820) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive, while the NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 and NCP51820 offer important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.

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Application Notes

Features

  • 150 V, high side and low side gate driver
  • Fast propagation delay of 50 ns max
  • Fast propagation delay of 50 ns max
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
  • Separate source and sink output pin
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out

Benefits

  • Support 48 V input design with sufficient safety margin
  • Suitable for high frequency operation
  • Increased efficiency and allow paralleling
  • Robust design for high switching frequency application
  • Allow control of rise and fall time for EMI tuning
  • Optimum driving of GaN power switches and simplify design
  • Small PCB foot print, reduced parasitic, suitable for high frequency operation

Applications

  • Resonant converters
  • Half-bridge and full bridge converters
  • Active clamp flyback converters
  • Non-isolated step down converters

End Products

  • Data center 48 V to low voltage intermediate bus converter
  • 48 V to PoL converter

GaN Drivers

Manufacturer Part Number Description View Details
NCP51810AMNTWG HIGH SPEED HALF-BRIDGE DRIVER FO View Details