Littelfuse Inc

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series

Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series

Image of Littelfuse's Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E0080 SeriesLittelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.

State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects

Features
  • Ultra-fast switching speeds
  • Lower switching losses
  • High temperature operation
  • High blocking voltages and low specific on-resistance (SiC material properties)
Applications
  • Power conversion systems
  • Solar inverters
  • Switch mode power supplies
  • UPS systems
  • Motor drives
  • High voltage DC/DC converters
  • Battery chargers

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPriceView Details
SICFET N-CH 1200V 39A TO247-3LSIC1MO120E0080SICFET N-CH 1200V 39A TO247-31200 V39A (Tc)369 - Immediate$148.08View Details
SICFET N-CH 1200V 27A TO247-3LSIC1MO120E0120SICFET N-CH 1200V 27A TO247-31200 V27A (Tc)0 - ImmediateSee Page for PricingView Details
SICFET N-CH 1200V 22A TO247-3LSIC1MO120E0160SICFET N-CH 1200V 22A TO247-31200 V22A (Tc)2221 - Immediate
1350 - Factory Stock		$96.19View Details
Published: 2018-01-05

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