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Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series
Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series
Littelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.
State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects
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Silicon Carbide (SiC) Ultra-Fast Switching MOSFET
| Image | Manufacturer Part Number | Description | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|
 |  | LSIC1MO120E0080 | SICFET N-CH 1200V 39A TO247-3 | 1200 V | 39A (Tc) | 370 - Immediate | $156.91 | View Details |
| LSIC1MO120E0120 | SICFET N-CH 1200V 27A TO247-3 | 1200 V | 27A (Tc) | 0 - Immediate | See Page for Pricing | View Details | |
| | LSIC1MO120E0160 | SICFET N-CH 1200V 22A TO247-3 | 1200 V | 22A (Tc) | 2227 - Immediate 2250 - Factory Stock | $115.04 | View Details |
Published: 2018-01-05
Hong Kong, China