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Driving the Future with Every Switch
The perfect match of Gate Driver ICs and power switches by Infineon.
Infineon offers a comprehensive portfolio of EiceDRIVER™ gate driver ICs with a variety of configurations, voltage classes, isolation levels, protection features, and package options. EiceDRIVER™ gate driver ICs are complementary to Infineon IGBT discretes and modules, silicon (CoolMOS™, OptiMOS™ and StrongIRFET™) and silicon carbide MOSFETs (CoolSiC™), gallium nitride HEMTs (CoolGaN™), or as part of integrated power modules (CIPOS™ IPM and iMOTION™ smart IPM).
- EV Charging
- Cordless Power Tools / Robotics / LEV
- Heat Pump
- Resources
As e-mobility grows, fast DC EV chargers are needed for efficient charging. DC chargers offer faster charging than standard AC chargers. A 150 kW DC charger can charge an EV 200 km in 15 mins. Infineon, with expertise in e-mobility and power supply, is a natural partner for advancing DC EV technology.
Recommended Gate Drivers
| Application | Voltage Class (V) | Configuration | Product | Source/Sink Current typ. | Packages | Description | Suitable Power Switches and Modules |
|---|---|---|---|---|---|---|---|
| DC-DC (<22 kw) |
600 V | High and low-side | IRS2186S | 4/4A | DSO-8 | High current for high power and fast switching frequency | CoolMOS™ MOSFET IPW60R018CFD7 IPW60R037CSFD CoolSIC™ MOSFET IMZ120R030M1H IMZA120R040M1H CoolSIC™ Schottky Diode IDW40G120C5B IDWD40G120C5 CoolSIC™ Module FF33MR12W1M1H (P)_B11 F4-33MR12W1M1H(P)_B11 FF33MR12W1M1HPB11BPSA1 |
| 650 V | 2ED2110S06M | 2.5/2.5A | DSO-16 300 mil | Infineon SOI, integrated BSD, fast level shift, Shutdown, separate VSS/COM | |||
| 650 V | 22ED2181S06F | 2.5/2.5 A | DSO-8 | Infineon SOI, integrated BSD, HIN, LIN | |||
| 2300 V | 1-ch isolated | 1ED3125MU12F | 10/9 A | DSO-8 | EiceDRIVER™ X3 Compact with Miller Clamp | ||
| 1200 V | High and low-side | IR2213S | 2/2.5 A | DSO-16 300 mil | Shutdown and Separate power Supply | ||
| 1200 V | Half-bridge | IR2214SS | 2/3 A | SSOP-24 | DESAT, Soft-off, Two stage turn on, Fault reporting, Synchronization | ||
| DC-DC (<50 kw) |
2300 V | 1-ch isolated | IED3124MU12F | 13.5/14 A | DSO-8 | EiceDRIVER™ X3 Compact with separate output | CoolMOS™ MOSFET IPW60R018CFD7 IPW60R037CSFD CoolSIC™ MOSFET IMZ120R030M1H IMZ120R040M1H CoolSIC™ Schottky Diode IDW40G120C5B IDWD40G120C5 CoolSIC™ Module FF8MR12W1M1H(P)_B11 FF17MR12W1M1H(P)_B11 FF11MR12W2M1H(P)_B11 F4-17MR12W1M1H(P)_B11 |
| 1200 V | 2-ch isolated | 2EDR8259H | 4/8 A | PG-DSO-16 | EiceDRIVER™ 2EDI with reinforced isolation | ||
| 2300 V | 1-ch isolated | 1ED3122MC12H | 10/9 A | PG-DSO-8-66 | EiceDRIVER™ X3 Compact with Miller Clamp | ||
| DC-DC (<150kW) | 2300 V | 1ED3124MC12H | 13.5/14 A | DSO-8 300mil | EiceDRIVER™ X3 Compact with separate output | CoolMOS™ MOSFET IPW60R018CFD7 CoolSIC™ MOSFET IMZ120R030M1H IMZ120R040M1H CoolSIC™ Schottky Diode IDW40G120C5B IDWD40G120C5 CoolSIC™ Module FF4MR12W2M1H(P)-B11 F4-11MR12W2M1H(P)_B11 FF4MR12W2M1HB70BPSA1 F411MR12W2M1HB70BPSA1 |
|
| 1ED3321MC12N | 6/8.5 A | DSO-16 | EiceDRIVER™ Enhanced 1ED-f3 with DESAT, Soft-off and Miller clamp | ||||
| 1ED3890MC12M | 7.5/11 A | DSO-16 fine pitch | EiceDRIVER™ Enhanced X3 Digital with I2C configurability, DESAT, soft-off and Miller clamp | ||||
| Single-end Boost PFC | 25 V | 1-ch non-isolated | 1ED4417N01B | 2.6/2.6A | SOT23-5 | Enable, programmable fault clear time UVLO | CoolMOS™ MOSFET P7 IPW60R037P7 IPW60R024P7 650 V TRENCHSTOP™5 H5IGBT IKW50N65EH5 650 V TRENCHSTOP™5 WR6 IKWH40N65WR6 IKWH50N65WR6 1200 V CoolSIC™ MOSFET IMW120R030M1H IMW120R040M1H 1200 V TRENCHSTOP™ 7 H7 IKW50N120CH7 CoolSiC™ Diode IDWD30G120C5 IDWD40G120C5 |
| 1ED44175N01B | 2.6/2.6A | SOT23-6 | Fast, accurate (±5%) OCP, fault reporting, Enable, Negative current sensing | ||||
| 1ED44176N01F | 0.8/1.75 A | DSO-8 | Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS/COM | ||||
| IES44273L | 1.5/1.5 A | SOT23-5 | Additional OUT pin | ||||
| 200 V | 1EDN8550B | 4/8A | SOT23-6 | True differential inputs with ± 80 V static ground-shift robustness | |||
| Interleaved boost PFC | 22 V | 2-ch non-isolated | 2EDN8534F | 5/5 A | DSO-8 | 2 ns delay matching, 19 ns propagation delay | |
| 25 V | IRS4427S | 2.3/2.3 A | DSO-8 | Matched propagation delay | |||
| Totem pole PFC | 650 V | High and low-side | 2ED2181S06F | 2.5/2.5 A | DSO-8 | Infineon SOI, integrated BSD, HIN, LIN | 600 V CoolMOS™ MOS CFD 7 MOSFET IPP60R070CFD7 IPP60R280CFD7 IPT60R035CFD7 650 V CoolSIC™ Hybrid Discrete IKW40N65RH5 IKW50N65RH5 IKW75N65RH5 IKW50N65SS5 IKW75N65SS5 EasyPACK™ IGBT MODULE FS100R12W2T7 |
| 1200 V | 2-ch isolated | 2EDB8259F | 4/8 A | DSO-16 | EiceDRIVER™ 2EDI with basic isolation (3k V UL1577) | ||
| 2EDB8259Y | 5/9 A | DSO-14 | EiceDRIVER™ 2EDI with basic isolation (3k V UL1577) | ||||
| Vienna Rectifier and NPC2 | 22 V | 2-ch non-isolated | 2EDN7534F | 5/5 A | DSO-8 | 2ns delay matching, 19ns propagation delay | 650 V CoolMOS™ C7 MOSFET IPP65R045C7 IPW65R019C7 IPL65R070C7 600 V CoolMOS™ P7 MOSFET IPP60R060P7 IPW60R024P7 650 V TRENCHSTOP™5 H5 IKW75N65EH5 1200 V CoolSIC™ Schottky Diode IDW40G120C5B CoolSIC™ Modules F3L11MR12W2M1H_B19 F3L11MR12W2M1HP_B19 F3L8MR12W2M1H_B11 F3L8MR12W2M1HP_B11 |
| 1200 V | 1-ch isolated | 1EDB6275F | 5/9 A | DSO-8 | EiceDRIVER™ 1EDB with basic isolation (3k V UL1577) | ||
| 2300 V | 1ED3142MU12F | 6/6.5 A | DSO-8 | EiceDRIVER™ X3 Compact with separate output | |||
| Three-phase full bridge | 2300 V | 1-ch isolated | 1ED3461MC12N | 7.5/5A | DSO-16 | EiceDRIVER™ Enhanced X3 Analog with adjustable DESAT, soft-off and Miller clamp | CoolSiC™ Module FS13MR12W2M1HPB11 |
| 1ED3321MC12N | 6/8.5A | DSO-16 | EiceDRIVER™ Enhanced 1ED-F3 with adjustable DESAT, soft-off and Miller clamp |
Millions of households rely on power tools for daily tasks. Consumers want robust, reliable, portable tools with low price and long battery life. Infineon's innovative portfolio provides safety features and meets consumer needs for all power tool applications, while reducing costs.
Recommended Gate Drivers for Low Voltage Drive & Battery Powered Applications
| Applications | Gate Driver Voltage Class (V) | Configuration | Product | Source/Sink Current typ. | Packages | Description | Suitable Power Switches and Modules |
|---|---|---|---|---|---|---|---|
| Motor Inverter / BLDC | 60 V | Three-phase | 6EDL7141 | 1.5/1.5 AV | VQFN-48 7x7mm | Fully programmable, integrated power supplies and current sense amplifiers | StrongIRFET™ MOSFET IRF7480M IRF6726M StrongIRFET™ 2 MOSFET IPP016N08NF2S IPP026N10NF2S 30 V OptiMOS™ 5 MOSFET BSZ0500NSI BSC009NE2LS5 40 V OptiMOS™ 5 MOSFET BSC019N04LS BSZ028N04LS 60 V OptiMOS™ 5 MOSFET BSC012N06NS IPT007N06N 80 V OptiMOS™ 5 MOSFET BSC021N08NS5 IPT010N08NM5 100 V OptiMOS™ 5 MOSFET BSC027N10NS5 IPT015N10N5 150 V OptiMOS™ 5 MOSFET BSC074N15NS5 |
| 160 V | High and low-side | 2ED2732S01G | 1/2 A | DFN10 3x3mm | Infineon SOI, integrated BSD, separate VSS/COM, thermal pad | ||
| 160 V | Three-phase | 6ED2742S01Q | 1/2 A | QFN32 5x5mm | Infineon SOI, integrated BSD, PMU, trickle charge pumps, programmable OCP, and current sense amp, RFE | ||
| 160 V | Half-bridge | 2ED2748S01G | 4/8 A | DFN10 3x3mm | Infineon SOI, integrated BSD, separate VSS/COM, thermal pad | ||
| 200 V | 1-ch non-isolated | 1EDN7550B | 4/8 A | SOT23-6 | True differential inputs, with ± 80 V static ground shift robustness | ||
| 200 V | Three-phase | 6ED003L02-F2 | 0.165/ 0.375 A | TSSOP-28 | Infineon SOI, OCP, Enable, fault reporting | ||
| 200 V | 6EDL04N02PR | 0.165/ 0.375 A | Infineon SOI, integrated BSD, OCP, Enable, fault reporting | ||||
| 200 V | High and low-side | IRS2005S | 0.29/0.6 A | DSO-8 | VCC & VBS UVLO, matched propagation delay | ||
| 200 V | Half-Bridge | IRS2007S | 0.29/0.6 A | VCC & VBS UVLO, matched propagation delay | |||
| 200 V | High and low-side | IRS2011S | 1/1 A | 60 ns prop delay, VCC & VBS UVLO | |||
| 600 V | Half-Bridge | 2EDL05N06PF | 0.36/0.7 AD | Infineon SOI, integrated BSD | |||
| 600 V | 2EDL23N06PJ | 2.3/2.8 A | DSO-14 | Infineon SOI, integrated BSD, OCP, Enable, fault reporting | |||
| 600 V | Three-phase | 6EDL04N06PT | 0.165/ 0.375 A | DSO-28 300 mil | Infineon SOI, integrated BSD, OCP, Enable, fault reporting | ||
| 600 V | High and low-side | IRS21867S | 4/4 A | DSO-8 | High current for high power and fast switching frequency with low UVLO (6 V/5.5 V) | ||
| Battery Charger | 22 V | 1-ch non-isolated | 1EDN8511B | 4/8 A | SOT23-6 | Separate output, 19 ns propagation delay | CoolMOS™ MOSFET IPW60R070CFD7 IPAN60R125PFD7S CoolMOS™ MOSFET P7 IPA80R900P7 IPA60R180P7S 650 V CoolSiC™ MOSFET IMW65R048M1H IMZA65R072M1H CoolSiC™ Diode IDH10G65C6 IDW20G65C5B OptiMOS™ 5 IPA083N10N5 IPA029N06N |
| 22 V | 2-ch non-isolated | 2EDN8534F | 5/5 A | DSO-8 | 2 ns delay matching, 19 ns propagation delay | ||
| 25 V | 1-ch non-isolated | 1ED44171N01B | 2.6/2.6 A | SOT23-5 | Enable, programmable fault clear time, UVLO | ||
| 25 V | 1ED44175N01B | 2.6/2.6 A | SOT23-6 | Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing | |||
| 25 V | IRS44273L | 1.5/1.5 A | SOT23-5 | Additional OUT pin | |||
| 600 V | High and low-side | IRS2186S | 4/4 A | DSO-8 | High current for high power and fast switching frequency | ||
| 650 V | 2ED2106S06F | 0.29/0.7 A | Infineon SOI, integrated BSD, HIN, LIN | ||||
| 650 V | 2ED2110S06M | 2.5/2.5 A | DSO-16 300 mil | Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM | |||
| 650 V | 2ED2181S06F | 2.5/2.5 A | DSO-8 | Infineon SOI, integrated BSD, HIN, LIN |
Recommended Gate Drivers for Light Electric Vehicles (LEV)
| Applications | Gate Driver Voltage Class (V) | Configuration | Product | Source/Sink Current typ. | Packages | Description | Suitable Power Switches and Modules |
|---|---|---|---|---|---|---|---|
| Motor Inverter <3kW (<48V battery) | 60 V | Three-phase | 6EDL7141 | 1.5/1.5A | VQFN-48 7x7 mm | Fully programmable, integrated power supplies and current sense amplifiers, slew rate control, protection features | 60 V StrongIRET™ IRFS753060 IRF60SC241 60 V OptoMOS™ 5 MOSFET IPTG007N06NM5 IPB01N06N IST011N06NM5 BSC012N06NS 75 V STrongIRFET™ IRFB7730 BSC036NE7NS3G |
| 160 V | High and Low side | 2ED2732S01G | 1/2 A | DFN10 3x3 mm | SOI, Integrated BSD, UVLO, separate VSS/COM, thermal pad | ||
| 160 V | Three-phase | 6ED2742S01Q | 1/2 A | QFN32, 5x5 mm | SOI, integrated BSD, PMU,100% DC w. trickle charge pump, Programmable OCP w. select gain, CS amp, RFE | ||
| 200 V | Three-phase | 6EDL04N02PR | 0.165/0.375A | TSSOP-28 | Infineon SOI, Integrated BSB, OCP, Enable fault reporting | ||
| 200 V | High and Low side | IRS2005 | 0.29/0.6A | DSO-8 | UVLO, MTON/OFF, max=50ns, 3.3V-15V input | ||
| 200 V | High and Low side | IRS2011S | 1/1 A | DSO-8 | UVLO, MTON/OFF, max=20ns, 3.3V-15V input | ||
| 600 V | High and Low side | 2EDL05N06PF | 0.36/0.7 A | DSO-8 | SOI, UVLO, MTON/OFF. Max=60ns,3.3-15Vinput, BSD | ||
| 600 V | Three-phase | 6EDL04N06PF | 0.165/0.375 A | DSO-28 300 mil | Infineon SOI, integrated BSD, OCP, Enable, fault reporting | ||
| 600 V | Single high-side | IRS21271S | 0.2/0.42A | DSO-8 | UVLO, OCP. 3-15V input, fault reporting | ||
| Motor Inverter 3-10kW (48-96 V Battery) | 160 V | High and Low side | 2ED2738S01G | 4.8 A | DFN10 3x3 mm | SOI, Integrated BSD, UVLO, Separate VSS/COM, Thermal pad | 80 V OptiMOS™5 MOSFET IPT010N08NM5 IPTG011N08NM5 IPB015N08N5 BSC019N08NS5 IST019N08NM5 100 V IR MOSFET™ IRLS4030 IRF100B201 100 V StrongIRFET™ 2 IPP026N10NF2S IPA030N10NF2S 100V OptiMOS™5 MOSFET IPTG014N10NM5 IPTG018N10NM5 IPTC015N10NM5 IPB017N10N5 IST026N10NM5 BCS027N10NS5 100V OptiMOS™6 MOSFET ISC022N10NM6 |
| 200 V | 10-ch non-isolated | 1EDN8550B | 4/8 A | SOT23-6 | True differential inputs, with ± 80 V static & ± 150 V dynamic ground-shift robustness, separate SRC/SNK output pins. | ||
| 500 V | High and Low side | IRS2110S | 2/2 A | DSO-16 W | MTON/OFF, max=10NS, Separate power and logic ground, SD pin,3-20V input | ||
| 600 V | High and Low side | 2EDL23N06PJ | 2.3/2.8 A | DSO-14 | 3.3 V-15 V input, -100 V transient, PGND, SOI integrated BSD, OCP, UVLO, Enable, Fault reporting | ||
| 600 V | High and Low side | IRS21867S | 4/4 A | DSO-8 | 3-5 V input, MTON/OFF, max=35ns, UVLO, neg. transient robust | ||
| 650 V | High and Low side | 2ED2181S06F | 2.5/2.5 A | DSO-8 | SOI, integrated BSD, 3.3-15Vinput, MTON/OFF, max=35ns, -100V transient | ||
| 650 V | High and Low side | 2ED21814S06J | 2.5/2.5 A | DSO-14 | SOI, Integrated BSD; 3.3-15V input, MTON/OFF, max-35ns, -100 transient, separate logic | ||
| Motor Inverter >10 kW (>96 V Battery) | 1200 V | 1-ch isolated | 1EDB8275F | 5/9 A | DSO-8 | 3kV basic isolation w. CT technology. (UL1577), separate SRC/SNK output, UVLO (4 types), CMTI >300 V/ns | 150 V IR MOSFET™ MOSFET IRFB4115 150 V OptiMOS™ 5 MOSFET IPB044N15N5 IPT039N15N5 200 V StrongIRFET™ IRF200S234 200 V OptiMOS™ 3 MOSFET IPB107N20N3G IPTG111N20NM3FD |
| 2300 V | 1ED3142MU12F | 6/6.5 A | EiceDRIVER™ X3 Compact with separate output | ||||
| 1200 V | 2-ch isolated | 2EDB8259F | 5/9 A | DSO-16 | 3kV basic isolation w. CT technology (UL1577). Dead-time control (DTC) and STP, UVLO (4 types), CMTI >150V/ns | ||
| 1200 V | 2-ch isolated | 2EDB8259Y | 5/9 A | DSO-14 | 3kV basic isolation w. CT technology (UL1577). Dead-time control (DTC) and STP, UVLO (4 types), CMTI >150V/ns | ||
| 2300 V | 1-ch isolated | 1ED3121MC12H | 5.5/5.5 A | DSO-8 300 mIL | EiceDRIVER™ X3 Compact with separate output |
Infineon EiceDRIVER™ gate driver IC families provide high power efficiency to help reduce global warming caused by carbon dioxide emissions. With high noise immunity and robustness, they’re easy to use; with features such as DESAT protection, active miller clamp, slew rate control, and I2C digital configurability, EiceDRIVER™ gate driver has been widely used in the Inverters and PFC for Heat Pumps at various power levels.
Heat pump categories by method - 3 main systems
Typical block diagram of heat pump system
Gate driver IC for motor drive application
Recommended Gate Drivers IC (Heat Pump – Inverter)
| Gate Driver Voltage Class (V) | Product | Technology | Number of Channels | UVLO ON/OFF typ. [V] | Drive current Io+/lo- typ. [A] | Propagation Delay off/on typ. [ns] | Features | Package | Suitable Power Switches and Modules |
|---|---|---|---|---|---|---|---|---|---|
| 600 V | 6EDL04I06PT | SOI | 6 | 11.7/9.8 | 0.165/0.375 | 490/530 | Inbuilt Bootstrap Diode; Over-current protection; Enable; Fault reporting; Separate pin for logic ground | DSO-28WB | 600 V RC-D2 IKD10N60RC2 IKD15N60RC2 650 V TRENCHSTOP™ IGBT6 IKA10N65ET6 IKA15N65ET6 600 V TRENCHSTOP™ IKA10N60T IKA15N60T 650 V TRENCHSTOP™ IGBT7 T7 IKW20N65ET7 IKW30N65ET7 IKW40N65ET7 |
| 600 V | 6EDL04N06P | 9.0/8.1 | 0.165/0.375 | 530/530 | |||||
| 1200 V | 6ED2230S12T | 11.4/10.4 | 0.35/0.65 | 600/600 | Inbuilt Bootstrap Diode; Over-current protection; Shoot-through protection; Enable; Fault Reporting; Programmable Fault Clear Time; Separate pin for logic ground | DSO-24 | 1200 V TRENCHSTOP™ IGBT7 S7 IKW40N120CS7 IKW25N120CS7 1200 V CoolSiC™ MOSFET IMW120R030M1H IMW120R040M1H |
||
| 1200V | 6ED2231S12T | 12.2/11.3 | 0.35/0.65 | 600/600 | |||||
| 650 V | 2ED2304S06F | SOI | 2 | 9.1/8.3 | 0.36/0.7 | 300/310 | Inbuilt Bootstrap Diode; Shoot through Protection | DSO-8 | 600 V RC-D2 IKD10N60RC2 IKD15N60RC2 650 V TRENCHSTOP™ IGBT6 IKA10N65ET6 IKA05N65ET6 600 V TRENCHSTOP™ IKA10N60T IKA15N60T 650 V TRENCHSTOP™ IGBT T7 IKW20N65ET7 IKW30N65ET7 IKW40N65ET7 |
| 2ED2104S06F | 8.9/8.0 | 0.29/0.70 | 90/90 | Inbuilt Bootstrap Diode; Shoot through Protection; Shutdown Input | |||||
| 2ED2184S06F | 9.1/8.2 | 2.5/2.5 | 200/200 | ||||||
| 600 V | 2EDL23N06PJ | 9.1/8.3 | 2.3/2.8 | 300/310 | Inbuilt Bootstrap Diode; Over -current Protection; Shoot-through Protection; Enable, Fault reporting; Separate pin for logic ground | DSO-14 | |||
| 2EDL23I06PJ | 12.5/11.6 | 2.3/2.8 | 400/420 | ||||||
| 1200 V | 2ED1324S12P | 12.2/11.3 | 2.3/2.3 | 500/500 | Inbuilt Bootstrap Diode; Active Miller Clamp; Short Circuit Clamp; Over-current Protection; Shoot-Through Protection; Enable; Programmable Fault Clear Time; Separate pin for Logic Ground | DSO-20DW | 1200 V TRENCHSTOP™ IGBT S7 IKW40N120CS7 IKW25N120CS7 1200V CoolSiC™ MOSFET IMW120R030M1H IMW120R040M1H |
||
| 2ED1322S12M | 12.2/11.3 | 2.3/4.6 | 350/350 | Inbuilt Bootstrap Diode; Over-current Protection; Shoot-Through Protection; Enable; Fault Reporting; Programmable Fault Clear Time; Separate pin for Logic Ground | DSO-16 | ||||
| 1200 V | 1EDI20N12AF | Coreless Transformer | 1 | 9.1/8.5 | 4.0/3.5 | 120/115 | Separate Sink/Source Output; Separate Pin for Logic Ground | DSO-8 150 mil | 1200 V TRENCHSTOP™ IGBT7 H7 IKW40N120CH7 |
| 1EDI60I12AF | 12.0/11.1 | 10.0/9.4 | 300/300 | ||||||
| 1EDI20I12MF | 12.011.1 | 4.4/4.1 | 300/300 | Active Miller Clamp; Separate sink/source output; Separate pin for Logic Ground | |||||
| 2EDO2OI12-FI | 2 | 12.0/11.0 | 1.5/2.5 | 85/85 | OP Amp and comparator for OCP | DSO-18 | |||
| 2300 V | 1ED312OMU12H | 1 | 10.0/8.0 | 5.5/5.5 | 90/90 | UL1577 Certified; Separate Sink/Source Output; Separate Pin for Logic Ground | DSO-8 300 mil | ||
| 1ED3240MC12H | 11.8/10.8 | 10.0/10.0 | 110/110 | Two level slew rate control; VDE0844-11 (Reinforced); UL1577 certified; Separate Sink/Source Output; Separate Pin for Logic Ground | |||||
| 1ED3122MC12H | 10.0/8.0 | 10.0/9.0 | 90/90 | UL1577 CERTIFIED; Active Miller Clamp; Separate Pin for Logic Ground | |||||
| 1ED3140MU12F | 9.3/8.55 | 6.5/5.5 | 45/45 | UL1577 CERTIFIED; Separate Sink/Source Output; Separate Pin for Logic Ground | DSO-8 150 mil | ||||
| 1ED3142MU12F | 13.6/12.55 | 6.5/5.5 | 45/45 | UL1577 CERTIFIED; Separate Sink/Source Output; Separate Pin for Logic Ground | |||||
| 1ED3321MC12N | 13.6/12.55 | 6/8.5 | 85/85 | UL1577 and VDE-11 Certified; Active Miller Clamp; DESAT and Soft-off | DSO-16 300 mil |
Recommended Gate Drivers IC (Heat Pump – PFC)
| Gate Driver Voltage Class (V) | Product | PFC Type | Technology | Number of Channels | UVLO ON/OFF typ. [V] | Drive current Io+/lo- typ. [A] | Propagation Delay off/on typ. [ns] | Features | Package | Suitable Power Switches and Modules |
|---|---|---|---|---|---|---|---|---|---|---|
| 25 V | IRS4427S | Boost PFC | Dual Low Side | 2 | - | 2.3/3.3 | 65/85 | DSO-8 | 650 V TRENCHSTOP™ 5 WR6 IKWH30N65WR6 IKW40N65WR6 650 V TRENCHSTOP™ 5 H5 IKW40N65RH5 IKWH40N65WR6XKSA1 RAPID 1 Diode IDW30C65D1 1200 V TRENCHSTOP™ IGBT7 H7 IKW40N120CH7 IKW40N120CH7XKSA1 EasyPIM™ Module (IGBT) FB50R07W2E3_B23 FB50R07W2E3_C36 |
|
| 24 V | 2ED24427N01F | 11.5/10.0 | 10.0/10.0 | 40/55 | DSO-8 with Power Pad | |||||
| 25 V | 1ED44171N01B | Single Low Side | 1 | 11.9/11.4 | 2.6/2.6 | 50/50 | SOT-23-5 | |||
| 1ED44176N01F | 11.9/11.4 | 0.8/1.75 | 50/50 | DSO-8 | ||||||
| 1ED44173N01B | 8.0/7.3 | 2.6/2.6 | 34/34 | SOT-23-6 | ||||||
| 1ED44175N01B | 11.9/11.0 | 2.6/2.6 | 50/50 | |||||||
| 650 V | 2ED2304S06F | Totem-pool PFC | SOI | 2 | 9.1/8.3 | 0.36/0.7 | 300/310 | Inbuilt Bootstrap Diode; Shoot-through Protection | DSO-8 | 650 V TRENCHSTOP™ 5 IKWH30N65WR6 IKW40N65WR6 650 V TRENCHSTOP™ 5 H5 IKW40N65RH5 |
| 2ED2104S06F | 8.9/8.0 | 0.29/0.7 | 90/90 | Inbuilt Bootstrap Diode; Shoot-through Protection; Shutdown Input | ||||||
| 2ED2184S06F | 9.1/8.2 | 2.5/2.5 | 200/200 | Inbuilt Bootstrap Diode; Shoot-through Protection; Shutdown Input | ||||||
| 600 V | 2EDL23N06PJ | 9.1/8.3 | 2.3/2.8 | 300/310 | Inbuilt Bootstrap Diode; Over current; Shoot-Through Protection; Enable; Fault Reporting; Separate pin for logic ground | DSO-14 | ||||
| 2EDL23I06PJ | 12.2/11.3 | 2.3/2.3 | 400/420 | |||||||
| 1200 V | 2ED1324S12P | 12.2/11.3 | 2.3/2.3 | 500/500 | Inbuilt Bootstrap Diode; Active Miller Clamp; Over current Protection; Shoot-Through Protection; Enable; Fault Reporting; Programmable Fault Clear Time; Separate pin for logic ground | DSO-20DW | 1200V TRENCHSTOP™ IGBT H7 IKW40N120CH7XKSA1 |
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| 2ED1322S12M | 12.2/11.3 | 2.3/4.6 | 350/350 | Inbuilt Bootstrap Diode; Over current Protection; Shoot-Through Protection; Enable; Programmable Fault Clear Time; Separate pin for logic ground | DSO-16 | |||||
| 1200 V | 1EDI20N12AF | Cordless Transformer | 1 | 9.1/8.5 | 4.0/3.5 | 12/115 | Separate sink/Source Output; Separate pin for Logic Ground | DSO-8 150 mil | 1200V TRENCHSTOP™ IGBT H7 IKW40N120CH7XKSA1 EasyPIM™ Module (IGBT) FP25R12W1T7_B11 FP35R12W2T7_B11 FP50R12W2T7_B11 FP35R12N2T7_B11 FP50R12N2T7_B11 FS55MR12W1M1HB11NPSA1 FS33MR12W1M1HPB11BPSA1 FS33MR12W1M1HPB11BPSA1 | |
| 1EDI60I12AF | 12.0/11.1 | 1.0/9.4 | 300/300 | |||||||
| 1EDI20I12MF | 12.0/11.1 | 4.4/4.1 | Active Miller Clamp; Separate Sink/Source Output; Separate pin for Logic Ground | |||||||
| 2ED020I12-FI | 2 | 12.0/11.0 | 1.5/2.5 | 85/85 | OPAMP and Comparator for OCP | DSO-8 150 mil | ||||
| 2300 V | 1ED3120MU12H | 1 | 10.0/8.0 | 5.5/5.5 | 90/90 | UL1577 Certified; Separate Sink/Source Output; Separate Pin for Logic Ground | DSO-18 | |||
| 1ED3122MU12H | 10.0/8.0 | 10.0/9.0 | UL1577 Certified; Active Miller Clamp; Separate Pin for Logic Ground | DSO-8 300 mil | ||||||
| 1ED3140MU12F | 9.3/8.55 | 6.5/5.5 | 45/45 | UL1577 Certified; Separate Sink/Source Output; Separate Pin for Logic Ground | ||||||
| 1ED3142MU12F | 13.6/12.55 | UL1577 Certified; Separate Sink/Source Output; Separate Pin for Logic Ground | DSO-8 150 mil | |||||||
| 1ED3321MC12N | 13.6/12.55 | 6/8.5 | 85/85 | UL1577 AND VDE-11 Certified; Active Miller Clamp; DESAT and Soft-off | DSO-16 300 mil |
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