High-Speed Mobile DDR SDRAMs

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            High-Speed Mobile DDR SDRAMs
                    Alliance Memory introduces the AS4CxxMxxMD1 high-speed mobile CMOS double data rate synchronous DRAMs
    

Image of Alliance Memory AS4C16M16MD1/32M16MD1/16M32MD1/64M16MD1 High-Speed Mobile DDR SDRAMs Alliance Memory's high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) are designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256 MB, 512 MB, 1 GB, and 2 GB devices are offered in 8 mm x 9 mm 60-ball and 8 mm x 13 mm 90-ball FPBGA packages. The AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1, and AS4C64M32MD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications.

Features and Benefits
Low power consumption from 1.7 V to 1.95 V Power-saving features: Auto temperature compensated self-refresh (ATCSR) Partial array self-refresh (PASR) Deep power down (DPD) mode Double data rate architecture for fast clock rates of 166 MHz and 200 MHz Each device available in extended (-30°C to +85°C) and industrial (-40°C to +85°C) temperature ranges Internally configured as four banks of 16 M x 16-bits and 32-bits; 32 M and 64 M x 16-bits; and 32 M and 64 M x 32-bits		Offered in 8 mm x 9 mm 60-ball and 8 mm x 13 mm 90-ball FPBGA packages Fully synchronous operation Programmable read or write burst lengths of 2, 4, 8, or 16 Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence Easy-to-use refresh functions include auto- or self-refresh RoHS-compliant Lead (Pb)- and halogen-free