Diodes Incorporated 的 DMN4034SSD 規格書

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ADVANCE INFORMATION
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
40V 34mΩ @ VGS = 10V 6.3A
59mΩ @ VGS = 4.5V 4.8A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• Motor control
• Backlighting
• DC-DC Converters
• Power management functions
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) test in production
• Low on-resistance
• Fast switching speed
• Max Qg rated
• “Green” component and RoHS compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN4034SSD-13 N4034SD 13 12 2,500
Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
Top View Equivalent Circuit
Top View
SO-8
= Manufacturer’s Marking
N4034SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
N4034SD
YY WW
D1S1
G1
S2
G2
D1
D2
D2
D2
S2
G2
D
1
S1
G1
ms” Product Line of ZE’EX : DMN4034SSD 2 a! 9 Document Numbev 0532105 Rev 2 , 2 www.diodes.cnm
DMN4034SSD
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage (Note 2) VGS ±20 V
Single Pulsed Avalanche Energy (Note 9) EAS 27 mJ
Single Pulsed Avalanche Current (Note 9) IAS 15.25 A
Continuous Drain current VGS = 10V (Note 4)
ID
6.3
A
TA = 70°C (Note 4) 5.0
(Note 3) 4.8
Pulsed Drain current VGS = 10V (Note 5) IDM 24.8 A
Continuous Source current (Body diode) (Note 4) IS 3.3 A
Pulsed Source current (Body diode) (Note 5) ISM 24.8 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Notes 3 & 6)
PD
1.25
10.0 W
mW/°C
(Notes 3 & 7) 1.80
14.3
(Notes 4 & 6) 2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 3 & 6)
RθJA
100
°C/W
(Notes 3 & 7) 70
(Notes 4 & 6) 58
Thermal Resistance, Junction to Lead (Notes 6 & 8) R
θ
JL 55
Operating and storage temperature range TJ, TSTG -55 to 150 °C
Notes: 2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
6. For a dual device with one active die.
7. For a device with two active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. UIS in production with L = 100µH, VDD = 40V.
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Thermal Characteristics
100m 1 10
1m
10m
100m
1
10
Single Pulse
Tamb=25°C
One active die
RDS(on) Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
ID Drain Current (A)
VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Two active die
One active die
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110 Tamb=25°C
One active die
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
One active die
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 40 ⎯ ⎯ V ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 40V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
1.0 ⎯ 3.0 V
ID = 250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 10) RDS (ON) ⎯ 0.023 0.034 Ω VGS = 10V, ID = 6A
0.039 0.059 VGS = 4.5V, ID = 5A
Forward Transconductance (Notes 10 & 11) gfs ⎯ 20.5 ⎯ S VDS = 15V, ID = 6A
Diode Forward Voltage (Note 10) VSD ⎯ 0.87 1.1 V
IS = 6A, VGS = 0V
Reverse recovery time (Note 11) tr
r
11.2 ⎯ ns IS = 2A, di/dt= 100A/μs
Reverse recovery charge (Note 11) Qr
r
⎯ 4.8 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance Ciss ⎯ 453 ⎯ pF VDS = 20V, VGS = 0V
f = 1MHz
Output Capacitance Coss ⎯ 79.1 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 40.5 ⎯ pF
Total Gate Charge (Note 12) Q
g
⎯ 4.9 8 nC
VGS = 4.5V
VDS = 20V
ID = 6A
Total Gate Charge (Note 12) Q
g
⎯ 10 18 nC
VGS = 10V
Gate-Source Charge (Note 12) Q
g
s ⎯ 1.8 ⎯ nC
Gate-Drain Charge (Note 12) Q
g
d ⎯ 2.4 ⎯ nC
Turn-On Delay Time (Note 12) tD
on
⎯ 2.7 ⎯ ns
VDD = 20V, VGS = 10V
ID = 1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 12) t
r
⎯ 2.7 ⎯ ns
Turn-Off Delay Time (Note 12) tD
off
⎯ 14 ⎯ ns
Turn-Off Fall Time (Note 12) tf ⎯ 6 ⎯ ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.
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Typical Characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
12345
1E-3
0.01
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.1 1 10
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
4V
3.5V
10V 4.5V
Output Characteristics
T = 25°C
3V
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
3.5V
10V 4V
2V
2.5V
3V
Output Characteristics
T = 150°C
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Drain Current (A)
VGS Gate-Source Voltage (V) Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID = 12A
VGS(th)
VGS = VDS
ID = 250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
10V
3.5V
4V
3V
On-Resistance v Drain Current
T = 25°C
4.5V
VGS
RDS(on) Drain-Source On-Resistance (Ω)
ID Drain Current (A)
Vgs = 0V
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
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Typical Characteristics – continued
0.1 1 10
0
100
200
300
400
500
600
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
VDS - Drain - Source Voltage (V) 0246810
0
2
4
6
8
10
VDS = 20V
ID = 6A
Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage
Q - Charge (nC)
VGS Gate-Source Voltage (V)
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Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basicgatechargewaveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
d(off)
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Package Outline Dimensions
h x 45°
DIM Inches Millimeters DIM Inches Millimeters
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC
A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51
D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20 θ0° 8° 0° 8°
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50
L 0.016 0.050 0.40 1.27 - - - - -
Suggested Pad Layout
1.52
0.060
7.0
0.275
0.6
0
.024
1.27
0.050
4.0
0.155
mm
inches
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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