MTA18ASF4G72PZ Addendum 規格書

Micron DDR4 SDRAM RDIMM
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
Features
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1
DDR4 SDRAM RDIMM
Addendum
MTA18ASF4G72PZ – 32GB
Features
Information provided here is in addition to or super-
sedes information provided in the Micron DDR4
RDIMM Core data sheet.
DDR4 functionality and operations supported as
defined in the component data sheet
Features and specifications defined in the Micron
DDR4 RDIMM Core data sheet
288-pin, registered dual in-line memory module
(RDIMM)
Fast data transfer rates: PC4-3200, PC4-2933
32GB (4 Gig x 72)
Single-rank
16 internal banks; 4 groups of 4 banks each
Figure 1: 288-Pin RDIMM
Options Marking
Operating temperature
Commercial (0°C TOPER +95°C) None
Package
288-pin DIMM (halogen-free) Z
Frequency/CAS latency
0.625ns @ CL = 22 (DDR4-3200) -3G2
0.682ns @ CL = 21 (DDR4-2933) -2G9
Table 1: Addressing
Parameter 32GB
Row address 256K A[17:0]
Column address 1K A[9:0]
Device bank group address 4 BG[1:0]
Device bank address per group 4 BA[1:0]
Device configuration 16Gb (4 Gig x 4), 16 banks
Module rank address 1 CS0_n
asf18c4gx72pz.ditamap Page 1
Primary Side
Secondary Side
U15
U14
U13
U12
U11
U10
U9
U8
U20
U19
U18
U17
U16
U6
U5
U4
U3
U2 U6
U5
U4
U3
U7
U1
U2
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
2
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
Features
Table 2: Part Numbers and Timing Parameters – 32GB Modules
Base device: MT40A4G4,1 16Gb DDR4 SDRAM
Notes: 1. The data sheet for the base device can be found on micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA18ASF4G72PZ-3G2F1.
Part Number2Module
Density
Configuration Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-nRCD-nRP)
MTA18ASF4G72PZ-3G2__ 32GB 4 Gig x 72 25.6 GB/s 0.625ns/3200 MT/s 22-22-22
MTA18ASF4G72PZ-2G9__ 32GB 4 Gig x 72 23.47 GB/s 0.682/2933 MT/s 21-21-21
asf18c4gx72pz.ditamap Page 2
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
3
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
Important Notes and Warnings
Important Notes and Warnings
Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this document
if you obtain the product described herein from any unauthorized distributor or other source not authorized by
Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi-
cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib-
utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of
non-automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and
conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to
indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron component
could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical
Applications"). Customer must protect against death, personal injury, and severe property and environmental
damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron
component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron compo-
nent for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsid-
iaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs,
damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product
liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its
subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron
product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT
FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in
customer's applications and products to eliminate the risk that personal injury, death, or severe property or envi-
ronmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach
of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly autho-
rized representative.
asf18c4gx72pz.ditamap Page 3
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
4
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
DQ Map
DQ Map
Table 3: Component-to-Module DQ Map
Component
Reference
Number
Component
DQ Module DQ
Module Pin
Number
Component
Reference
Number
Component
DQ Module DQ
Module Pin
Number
U2 0 3 157 U3 0 11 168
1 1 150 1 9 161
2 2 12 2 10 23
3 0 5 3 8 16
U4 0 19 179 U5 0 27 190
1 17 172 1 25 183
2 18 34 2 26 45
3 16 27 3 24 38
U6 0 CB3 201 U8 0 35 249
1 CB1 194 1 33 242
2 CB2 56 2 34 104
3 CB0 49 3 32 97
U9 0 43 260 U10 0 51 271
1 41 253 1 49 264
2 42 115 2 50 126
3 40 108 3 48 119
U11 0 59 282 U12 0 60 128
1 57 275 1 62 135
2 58 137 2 61 273
3 56 130 3 63 280
U13 0 52 117 U14 0 44 106
1 54 124 1 46 113
2 53 262 2 45 251
3 55 269 3 47 258
U15 0 36 95 U16 0 CB4 47
1 38 102 1 CB6 54
2 37 240 2 CB5 192
3 39 247 3 CB7 199
U17 0 28 36 U18 0 20 25
1 30 43 1 22 32
2 29 181 2 21 170
3 31 188 3 23 177
U19 0 12 14 U20 0 4 3
1 14 21 1 6 10
2 13 159 2 5 148
3 15 166 3 7 155
asf18c4gx72pz.ditamap Page 4
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
5
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
IDD Specifications
IDD Specifications
Table 4: DDR4 IDD Specifications and Conditions – 32GB (Die Revision E)
Values are for the MT40A4G4 DDR4 SDRAM only and are computed from values specified in the 16Gb (4 Gig x 4) component
data sheet.
Parameter Symbol 3200 2933 Units
One bank ACTIVATE-PRECHARGE current IDD0 990 972 mA
One bank ACTIVATE-PRECHARGE, word line boost, IPP current IPP0 54 54 mA
One bank ACTIVATE-READ-PRECHARGE current IDD1 1188 1170 mA
Precharge standby current IDD2N 810 792 mA
Precharge standby ODT current IDD2NT 918 900 mA
Precharge power-down current IDD2P 684 684 mA
Precharge quite standby current IDD2Q 756 756 mA
Active standby current IDD3N 1080 1062 mA
Active standby IPP current IPP3N 36 36 mA
Active power-down current IDD3P 864 846 mA
Burst read current IDD4R 2286 2142 mA
Burst write current IDD4W 1890 1818 mA
Burst refresh current (1x REF) IDD5R 1224 1224 mA
Burst refresh IPP current (1x REF) IPP5R 72 72 mA
Self refresh current: Normal temperature range (0°C to 85°C) IDD6N 954 954 mA
Self refresh current: Extended temperature range (0°C to 95°C) IDD6E 2034 2034 mA
Self refresh current: Reduced temperature range (0°C to 45°C) IDD6R 360 360 mA
Auto self refresh current (25°C) IDD6A 198 198 mA
Auto self refresh current (45°C) IDD6A 360 360 mA
Auto self refresh current (75°C) IDD6A 918 918 mA
Auto self refresh current (95°C) IDD6A 2034 2034 mA
Auto self refresh IPP current IPP6X 108 108 mA
Bank interleave read current IDD7 3546 3510 mA
Bank interleave read IPP current IPP7 162 162 mA
Maximum power-down current IDD8 648 648 mA
asf18c4gx72pz.ditamap Page 5
00000
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
6
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
IDD Specifications
Table 5: DDR4 IDD Specifications and Conditions – 32GB (Die Revision B)
Values are for the MT40A4G4 DDR4 SDRAM only and are computed from values specified in the 16Gb (4 Gig x 4) component
data sheet.
Parameter Symbol 3200 2933 Units
One bank ACTIVATE-PRECHARGE current IDD0 1080 1062 mA
One bank ACTIVATE-PRECHARGE, word line boost, IPP current IPP0 72 72 mA
One bank ACTIVATE-READ-PRECHARGE current IDD1 1260 1242 mA
Precharge standby current IDD2N 936 918 mA
Precharge standby ODT current IDD2NT 1008 990 mA
Precharge power-down current IDD2P 774 774 mA
Precharge quite standby current IDD2Q 846 846 mA
Active standby current IDD3N 1404 1386 mA
Active standby IPP current IPP3N 54 54 mA
Active power-down current IDD3P 1242 1224 mA
Burst read current IDD4R 3096 2952 mA
Burst write current IDD4W 2952 2826 mA
Burst refresh current (1x REF) IDD5R 1422 1404 mA
Burst refresh IPP current (1x REF) IPP5R 90 90 mA
Self refresh current: Normal temperature range (0°C to 85°C) IDD6N 1206 1206 mA
Self refresh current: Extended temperature range (0°C to 95°C) IDD6E 2178 2178 mA
Self refresh current: Reduced temperature range (0°C to 45°C) IDD6R 522 522 mA
Auto self refresh current (25°C) IDD6A 180 180 mA
Auto self refresh current (45°C) IDD6A 522 522 mA
Auto self refresh current (75°C) IDD6A 1098 1098 mA
Auto self refresh current (95°C) IDD6A 2178 2178 mA
Auto self refresh IPP current IPP6X 198 198 mA
Bank interleave read current IDD7 4284 4158 mA
Bank interleave read IPP current IPP7 198 198 mA
Maximum power-down current IDD8 720 720 mA
asf18c4gx72pz.ditamap Page 6
00000
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
7
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
IDD Specifications
Table 6: DDR4 IDD Specifications and Conditions – 32GB (Die Revision F)
Values are for the MT40A4G4 DDR4 SDRAM only and are computed from values specified in the 16Gb (4 Gig x 4) component
data sheet.
Parameter Symbol 3200 2933 Units
One bank ACTIVATE-PRECHARGE current IDD0 990 972 mA
One bank ACTIVATE-PRECHARGE, word line boost, IPP current IPP0 54 54 mA
One bank ACTIVATE-READ-PRECHARGE current IDD1 1188 1170 mA
Precharge standby current IDD2N 810 792 mA
Precharge standby ODT current IDD2NT 918 900 mA
Precharge power-down current IDD2P 684 684 mA
Precharge quite standby current IDD2Q 756 756 mA
Active standby current IDD3N 1080 1062 mA
Active standby IPP current IPP3N 36 36 mA
Active power-down current IDD3P 864 846 mA
Burst read current IDD4R 2286 2142 mA
Burst write current IDD4W 1728 1656 mA
Burst refresh current (1x REF) IDD5R 1224 1224 mA
Burst refresh IPP current (1x REF) IPP5R 72 72 mA
Self refresh current: Normal temperature range (0°C to 85°C) IDD6N 954 954 mA
Self refresh current: Extended temperature range (0°C to 95°C) IDD6E 1620 1620 mA
Self refresh current: Reduced temperature range (0°C to 45°C) IDD6R 360 360 mA
Auto self refresh current (25°C) IDD6A 198 198 mA
Auto self refresh current (45°C) IDD6A 360 360 mA
Auto self refresh current (75°C) IDD6A 918 918 mA
Auto self refresh current (95°C) IDD6A 1620 1620 mA
Auto self refresh IPP current IPP6X 108 108 mA
Bank interleave read current IDD7 4860 4590 mA
Bank interleave read IPP current IPP7 198 198 mA
Maximum power-down current IDD8 648 648 mA
asf18c4gx72pz.ditamap Page 7
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8
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
Functional Block Diagram
Functional Block Diagram
Figure 2: Functional Block Diagram
Note: 1. The ZQ ball on each DDR4 component is connected to an external 240Ω ±1% resistor that is tied to ground. It is
used for the calibration of the component’s ODT and output driver.
asf18c4gx72pz.ditamap Page 8
DQ
DQ
DQ
DQ
ZQ
DQ0
DQ1
DQ2
DQ3
Vss
U2
DQ
DQ
DQ
DQ
ZQ
DQ4
DQ5
DQ6
DQ7
Vss
U20
DQS0_t
DQS0_c
DQS9_t
DQS9_c
DQ
DQ
DQ
DQ
ZQ
DQ8
DQ9
DQ10
DQ11
Vss
U3
DQ
DQ
DQ
DQ
ZQ
DQ12
DQ13
DQ14
DQ15
Vss
U19
DQS1_t
DQS1_c
DQS10_t
DQS10_c
DQ
DQ
DQ
DQ
ZQ
DQ16
DQ17
DQ18
DQ19
Vss
U4
DQ
DQ
DQ
DQ
ZQ
DQ20
DQ21
DQ22
DQ23
Vss
U18
DQS2_t
DQS2_c
DQS11_t
DQS11_c
DQ
DQ
DQ
DQ
ZQ
DQ24
DQ25
DQ26
DQ27
Vss
U5
DQ
DQ
DQ
DQ
ZQ
DQ28
DQ29
DQ30
DQ31
Vss
U17
DQS3_t
DQS3_c
DQS12_t
DQS12_c
DQ
DQ
DQ
DQ
ZQ
CB0
CB1
CB2
CB3
Vss
U6
DQ
DQ
DQ
DQ
ZQ
CB4
CB5
CB6
CB7
Vss
U16
DQS8_t
DQS8_c
DQS17_t
DQS17_c
DQ
DQ
DQ
DQ
ZQ
DQ32
DQ33
DQ34
DQ35
Vss
U8
DQ
DQ
DQ
DQ
ZQ
DQ36
DQ37
DQ38
DQ39
Vss
U15
DQS4_t
DQS4_c
DQS13_t
DQS13_c
DQ
DQ
DQ
DQ
ZQ
DQ40
DQ41
DQ42
DQ43
Vss
U9
DQ
DQ
DQ
DQ
ZQ
DQ44
DQ45
DQ46
DQ47
Vss
U14
DQS5_t
DQS5_c
DQS14_t
DQS14_c
DQ
DQ
DQ
DQ
ZQ
DQ48
DQ49
DQ50
DQ51
Vss
U10
DQ
DQ
DQ
DQ
ZQ
DQ52
DQ53
DQ54
DQ55
Vss
U13
DQS6_t
DQS6_c
DQS15_t
DQS15_c
DQ
DQ
DQ
DQ
ZQ
DQ56
DQ57
DQ58
DQ59
Vss
U11
DQ
DQ
DQ
DQ
ZQ
DQ60
DQ61
DQ62
DQ63
Vss
U12
DQS7_t
DQS7_c
DQS16_t
DQS16_c
A/B-CS0_n
U7
A/B-CS0_n, A/B-BA[1:0]A/B-BG[1:0],
A/B-ACT_n, A/B-A[17, 13:0], A/B-RAS_n/A16,
A/B-CAS_n/A15, A/B-WE_n/A14,
A/B-CKE0, A/B-ODT0
CK[1:0]_t
CK[1:0]_c
Command, control, address, and clock line terminations:
DDR4
SDRAM
VTT
DDR4
SDRAM
VDD
U1
A0
SPD EEPROM/
Temperature
sensor
A1 A2
SA0 SA1
SDA
SCL
EVT
EVENT_n
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
CS_n DQS_t DQS_c
SA2
V
REFCA
V
SS
DDR4 SDRAM, Register
DDR4 SDRAM, Register
V
DD
Control, command and
address termination
V
DDSPD
SPD EEPROM/Temp Sensor,
Register
V
TT
DDR4 SDRAM, Register
DDR4 SDRAM
V
PP
CS0_n
BA[1:0]
BG[1:0]
ACT_n
A[17, 13:0]
RAS_n/A16
CAS_n/A15
WE_n/A14
CKE0
ODT0
PAR_IN
ALERT_CONN_N
A/B-CS0_n: Rank 0
A/B-BA[1:0]: DDR4 SDRAM
A/B-BG[1:0]: DDR4 SDRAM
A/B-ACT_n: DDR4 SDRAM
A/B-A[17,13:0]: DDR4 SDRAM
A/B-RAS_n/A16: DDR4 SDRAM
A/B-CAS_n/A15: DDR4 SDRAM
A/B-WE_n/A14: DDR4 SDRAM
A/B-CKE0: Rank 0
A/B-ODT0: Rank 0
A/B-PAR: DDR4 SDRAM
ALERT_DRAM: DDR4 SDRAM
R
E
G
I
S
T
E
R
&
P
L
L
RESET_N
CK[1:0]_c
DDR4 SDRAM
QRST_N: DDR4 SDRAM
CK[1:0]_t
ZQ
VSS
SA0
SA1
SA2
SCL
SDA
CK0_t
CK0_c
CK1_t
CK1_c
v s m 059) a (2x) 1 z 15 m as; w V I75 m 069) w - 225w mnw- mo u a m 57} “swam m m 91sz n 75 «a can) a 7 151mm) 9 s «a 374) mu m « l I ;/ - mu m 722mm ma Izaasmss) m Backview m1 m3 um m5 m5 L117 ma m9 um W sam‘m w 7 v . 2 mm 124) \pm 288 w mum} 595mm“? mun.) V2295”)! w szsskasla fizssunxa m kzssuma m w m w 5mm“ mausn} w W? \ f ‘ 15 40 019p x w an ‘ 3 n m um (4x1 w ‘nsmmsnwr Fm 145
CCM005-341111752-10523 Micron Technology, Inc. reserves the right to change products or specifications without notice.
asf18c4gx72pz.pdf - Rev. E 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved.
9
32GB (x72, ECC, SR) 288-Pin DDR4 RDIMM
Module Dimensions
Module Dimensions
Figure 3: 288-Pin DDR4 RDIMM, RC-C3
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only.
3. Tolerance on all dimensions ±0.15mm unless otherwise specified.
31.40 (1.236)
31.10 (1.224)
0.75 (0.03) R
(8X)
Front view
133.48 (5.255)
133.22 (5.244)
Back view
1.5 (0.059)
1.3 (0.051)
3.9 (0.153)
MAX
3.0 (0.118) (4X) TYP
9.5 (0.374)
TYP
Pin 1
5.95 (0.234) TYP
126.65 (4.99)
TYP
0.85 (0.033)
TYP
0.60 (0.0236)
TYP
0.75 (0.030) R
64.6 (2.54)
TYP
56.10 (2.21)
TYP
Pin 288 Pin 145
2.20 (0.087) TYP
72.25 (2.84)
TYP
0.5 (0.0197) TYP
28.9 (1.14)
TYP
10.2 (0.4)
TYP
25.5 (1.0)
TYP
22.95 (0.9)
TYP
10.2 (0.4)
TYP
22.95 (0.90)
TYP
3.35 (0.132) TYP
(2X)
3.15 (0.124)
TYP
14.6 (0.57)
TYP 8.0 (0.315)
TYP
16.1 (0.63)
TYP
Pin 144
1.25 (0.049) x 45° (2X)
2.25 (0.88) TYP
1.5 (0.059) D
(2X)
1.75 (0.069) TYP
U15
U14
U13
U12
U11
U10
U9
U8
U20
U19
U18
U17
U16
U6
U5
U4
U3
U2 U6
U5
U4
U3
U7
U1
U2
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006
208-368-4000, micron.com/support
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes
occur.
asf18c4gx72pz.ditamap Page 9