onsemi 的 MMBT,SMMBT4401L 規格書

0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 11 1Publication Order Number:
MMBT4401LT1/D
MMBT4401L, SMMBT4401L
Switching Transistor
NPN Silicon
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCBO 60 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC600 mAdc
Collector Current − Peak ICM 900 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2X M G
G
2X = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
MMBT4401LT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT4401LT1G
SMMBT4401LT1G SOT−23
(Pb−Free) 3000 / Tape &
Reel
10,000 / Tape &
Reel
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MMBT4401L, SMMBT4401L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE 20
40
80
100
40
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) −
−0.4
0.75
Vdc
Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.75
−0.95
1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT250 − MHz
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 −
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td− 15 ns
Rise Time tr− 20
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts− 225 ns
Fall Time tf− 30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
-2.0 V < 2.0 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 kW
+30 V
200 W
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 kW
+30 V
200 W
CS* < 10 pF
-4.0 V
MMBT4401L, SMMBT4401L
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3
Figure 3. Charge Data
IC, COLLECTOR CURRENT (mA)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 4. Turn−On Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 5. Rise and Fall Times
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
QT
QA
25°C 100°C
TRANSIENT CHARACTERISTICS
0.3
0.2
30
ts, STORAGE TIME (ns)
′t, TIME (ns)
t, TIME (ns)tf, FALL TIME (ns)
70
100
10 20 50 70 100 200 300 500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0 20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
VCC = 30 V
IC/IB = 10
tr
tf
10 20 50 70 100 200 300 500
30
100
200
30
70
50
300
10 20 50 70 100 200 300 500
30
ts′ = ts - 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
MMBT4401L, SMMBT4401L
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4
6.0
8.0
10
0
4.0
2.0
0.1 2.0 5.0 10 20 50
1.00.50.20.01 0.02 0.05 100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150 W
IC = 500 mA, RS = 200 W
IC = 100 mA, RS = 2.0 kW
IC = 50 mA, RS = 4.0 kW
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100k50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k
6.0
8.0
10
0
4.0
2.0
NF, NOISE FIGURE (dB)
Figure 9. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
hie, INPUT IMPEDANCE (OHMS)
Figure 10. Input Impedance
IC, COLLECTOR CURRENT (mA)
50k
500
20k
10k
5.0k
2.0k
1.0k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
Figure 11. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.2
10
Figure 12. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
-4
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401L, SMMBT4401L
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5
STATIC CHARACTERISTICS
-55°C
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (A)
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.2
0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
IC = 1.0 mA
0.001
10 mA 100 mA 500 mA
50
250
300
500
0.01
h , DC CURRENT GAIN
0.1
0
1
FE
TJ = 150°C
400
25°C
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
Figure 15. Collector−Emitter Saturation
Voltage vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.15
0.20
0.30
0.35
0.05
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.01 0.1
0
-0.5
0
+0.5
-1.0
-1.5
-2.0
1
150°C
qVC for VCE(sat)
qVB for VBE
0.0001
COEFFICIENT (mV/ C)°
-2.5 1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
0.01 0.1
1.0
110
300 mA
100
150
200
350
450
-55°C
0.001
25°C
0.10
0.25
IC/IB = 10
100
|50§C 150‘C
MMBT4401L, SMMBT4401L
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6
STATIC CHARACTERISTICS
Figure 17. Base−Emitter Saturation Voltage vs.
Collector Current Figure 18. Base−Emitter Turn On Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
1.1
1
0.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
VBE(on), BASE−EMITTER TURN ON
VOLTAGE (V)
0.8
150°C
25°C
−55°C0.8
150°C
25°C
−55°C
IC/IB = 10 VCE = 2.0 V
Figure 19. Input Capacitance vs. Emitter Base
Voltage Figure 20. Output Capacitance vs. Collector
Base Voltage
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
63210
9
11
13
15
19
21
5
0
3025100
1.5
2.5
3.5
4.5
6.5
8.5
C
ibo
, INPUT CAPACITANCE (pF)
Cobo, OUTPUT CAPACITANCE (pF)
17
5.5
4 5 5 1520 354045
7.5
Figure 21. Safe Operating Area Figure 22. Current−Gain−Bandwidth Product
VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
100101
0.001
0.01
1
100.1
10
1000
I
C
, COLLECTOR CURRENT (A)
fT, CURRENT−GAIN−BANDWIDTH (MHz)
0.1
100
1 100 100
0
10 msec
1 sec
VCE = 1.0 V
TA = 25°C
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SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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