In summary, Vishay’s 650 V silicon carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. These devices are designed to increase the efficiency of high-frequency applications by reducing switching losses regardless of the effects from temperature variances, thereby allowing the devices to operate at higher temperatures. The devices’ merged PIN Schottky design shields the electric field from the Schottky barrier to reduce leakage currents while increasing surge current capability via hole injection. Compared to pure-silicon Schottky devices, these diodes handle the same level of current with only a slight increase in forward voltage drop while demonstrating a significantly higher degree of ruggedness, providing designers with increased flexibility in system optimization. They are offered in 2L TO-220AC and TO-247AD 3L packages.