SiC is a wide bandgap semiconductor offering exceptional efficiency in high-voltage power switching applications. ROHM has more than 20 years of history developing SiC technology. In 2009, the company acquired one of the world's leading SiC substrate suppliers, SiCrystal. Since then, ROHM established a vertically integrated SiC production system from materials to device processing and packaging. After introducing several generations of SiC diodes, MOSFETs and module products, ROHM has further optimized the double-trench technology and released the 4th generation of SiC MOSFET products, which are the focus of this training module.