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Image of ROHM 4th Generation SiC MOSFETs - Lineup

The 4th Generation SiC MOSFETs from ROHM are offered in 750 V and 1,200 V ratings, and available in through-hole package styles. These devices support advanced power electronics design with a broad range of ON-resistance and current ratings. Kelvin source terminal for gate driver connection is available in TO247-4L packages, enabling faster switching speed by avoiding the source inductance impact from the main current path.

PTM Published on: 2022-06-09