As the blocking voltage of silicon MOSFETs increases, so does the overall die size. Wolfspeed SiC MOSFETs are able to provide 1700 V blocking voltage in a significantly smaller package. These devices are much more robust than the specified blocking voltage, with breakdown voltages much higher than 1700 V. Additional material benefits of Silicon Carbide over Silicon include lower switching and conduction losses with higher speed and greater peak current. The Wolfspeed MOSFET is a simple DMOS device, making it a direct replacement for silicon that is easy to drive. The SiC diode can be switched rapidly and efficiently, allowing shrinkage of an auxiliary power supply and higher frequency operation than with an equivalent silicon device. Additionally, the SiC device will run much cooler than an equivalent silicon device, which provides the designer with an option to reduce heat sink size, fan size, and other aspects of thermal design. All of these advantages of the SiC MOSFET will result in lower system cost.