STMicroelectronics

STPOWER SiC MOSFETs

STMicroelectronics' state-of-the-art MOSFET packages are specifically designed for automotive and industrial applications

Image of STMicro STPOWER SiC MOSFETsSTMicroelectronics' STPOWER SiC MOSFETs bring the advanced efficiency and reliability of wide bandgap materials to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. With an extended voltage range from 650 V to 1700 V, these MOSFETs feature excellent switching performance combined with very low on-state resistance RDS(ON) per area figure of merit. ST SiC MOSFETs allow the design of more efficient and compact systems than ever. ST’s 1200 V SiC MOSFETS exhibit an outstanding temperature rating of +200°C for improved thermal design of power electronics systems. Compared to silicon MOSFETs, SiC MOSFETs also feature significantly reduced switching losses with minimal variation versus the temperature.

ST’s advanced and innovative 3rd generation SiC MOSFET technology features a very low RDS(ON) over the entire temperature range combined with low capacitances and very high switching operations. This improves application performance in frequency, energy efficiency, system size, and weight reduction.

Key Features

  • Automotive-grade (AG) qualified devices
  • Very high-temperature handling capability (max. TJ = +200°C)
  • Very low switching losses (minimal variation versus temperature) allowing to operate at very high switching frequency
  • Low on-state resistance over the temperature range
  • Simple to drive
  • Very fast and robust intrinsic body diode proved

Gen 2

ImageManufacturer Part NumberDescriptionAvailable QuantityPrice
SICFET N-CH 1200V 33A HIP247SCTW40N120G2VAGSICFET N-CH 1200V 33A HIP247513 - Immediate$150.75View Details
SILICON CARBIDE POWER MOSFET 120SCTWA60N120G2-4SILICON CARBIDE POWER MOSFET 120238 - Immediate$149.19View Details
SICFET N-CH 650V 100A HIP247SCTW100N65G2AGSICFET N-CH 650V 100A HIP247491 - Immediate$210.45View Details
SICFET N-CH 650V 90A H2PAK-7SCTH90N65G2V-7SICFET N-CH 650V 90A H2PAK-7219 - Immediate$237.05View Details
TRANS SJT N-CH 1200V 91A HIP247SCTW70N120G2VTRANS SJT N-CH 1200V 91A HIP247428 - Immediate$267.27View Details

Gen 1

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SICFET N-CH 1200V 20A H2PAK-2SCT20N120HSICFET N-CH 1200V 20A H2PAK-2320 - Immediate$119.14View Details
HIP247 IN LINESCT1000N170HIP247 IN LINE321 - Immediate$72.91View Details
SICFET N-CH 1200V 12A HIP247SCT10N120SICFET N-CH 1200V 12A HIP247347 - Immediate$73.82View Details
SICFET N-CH 1200V 65A HIP247SCT50N120SICFET N-CH 1200V 65A HIP247565 - Immediate$225.23View Details
SICFET N-CH 1200V 12A HIP247SCT10N120AGSICFET N-CH 1200V 12A HIP247537 - Immediate$69.96View Details
Updated: 2024-11-22
Published: 2015-02-19

Related Product Highlight

SCT055HU65G3AG Automotive-Grade Silicon Carbide Power MOSFET This silicon carbide STPOWER MOSFET device has been developed using STMicroelectronics’ advanced and innovative 3rd generation SiC MOSFET technology.
HB2 Series 650 V IGBT STMicro's IGBT 650 V HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values.
Power MOSFETs STMicroelectronics' power MOSFETs are designed for applications which include switch-mode power supplies, lighting, DC-DC converters, motor control, and automotive.

Related Articles and Blogs

Wide Bandgap Semiconductors Are Reshaping the Transportation World The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation.
Wide Band Gap Semiconductors in Aerospace and Satellite Applications Wide Band Gap semiconductors bring several advantages in power conversion, such as increased power density and efficiency, and reducing system size and weight.
2023 May be the Year You Try Silicon Carbide: Here’s Why Silicon carbide is coming down in cost and can support the development of smaller and more efficient power conversion solutions compared with silicon.

Related Product Training Modules

ST MOSFETs To give users a quick overview of basic MOSFET parameters and fundamentals.
Silicon Carbide MOSFET Ideal for improving the performance of high power systems that traditionally have relied on IGBTs as power switches, explore STMicroelectronics Silicon Carbide MOSFET technology.