Name: SCTWA60N120G2-4
Brand: STMicroelectronics
SKU: 497-SCTWA60N120G2-4-ND
Price: 153.2 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTWA60N120G2-4
DigiKey Part Number	497-SCTWA60N120G2-4-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTWA60N120G2-4
Description	SILICON CARBIDE POWER MOSFET 120
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
Datasheet	Datasheet
EDA/CAD Models	SCTWA60N120G2-4 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	388W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4