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HB2 Series 650 V IGBT
STMicro's trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
STMicroelectronics' IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Features
- Maximum junction temperature: TJ = 175°C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
- Co-packaged protection diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
HB2 Series 650 V IGBT
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | STGWA40HP65FB2 | IGBT TRENCH FS 650V 72A TO247 | 36 - Immediate | $41.65 | View Details |
|  | SCTL35N65G2V | TRANS SJT N-CH 650V PWRFLAT HV | 5869 - Immediate | $131.88 | View Details |
Published: 2019-05-09
Hong Kong, China