Isolated DC/DC Converters for IGBT, SiC & GaN

DC/DC converters for applications that require high Isolation up to 10 kVDC

RECOM’s converters for IGBT applications provide asymmetric outputs of +15 V and -9 V as a single part solution. Converters with +20 V and -5 V outputs are used for SiC MOSFETs and for the second generation of SiC MOSFETs, converters with +15 V and -3 V outputs have been developed. For GaN devices RECOM also offers +6 V and +9V options that are required by GaN HEMT technology. All of RECOM’s converters for gate drivers offer high isolation (up to 6.4kV) and come in compact packages., which is able to withstand the stress placed by the high switching rate.

 

  • IGBT
  • SiC
  • GaN
  • Reference Design

High isolated DC/DC converters to extend the lifetime of IGBT drivers

IGBT controllers are commonly used in inverter applications. Oftentimes, optocouplers act as an insulator for the control signal, but there is also a need for insulation on the power side for the high floating voltages. A RECOM converter is a simple way to meet high isolation requirements and provide the proper gate voltage for an IGBT application.

 

Features

  • Asymmetric outputs +15 V/-9 V
  • Efficiency up to 86%
  • High grade isolation up to 6.4 kVDC/1 sec
  • Operating temperature range up to 90°C
  • EN certified
  • 3 year warranty

Applications

  • Variable Frequency Drive (VFD)
  • IGBT gate driver circuits
  • Motor control units
  • General purpose inverter
  • Uninterruptible power supplies
  • Welding machines

 

  Model Power VIN VOUT Isolation Cert. Case
Recom RH-xx1509D RH-xx1509D 1 W 5, 12, 24 +15V/-9 V 3 kVDC or 4 kVDC EN SIP7
Recom RP-xx1509D RP-xx1509D 1 W 5, 12, 24 +15V/-9 V 5.2 kVDC EN SIP7
Recom RxxP1509D RxxP1509D 1 W 5, 12, 24 +15V/-9 V 6.4 kVDC EN SIP7
Recom RKZ-xx1509D RKZ-xx1509D 2 W 5, 12, 24 +15V/-9V 3 kVDC or 4 kVDC EN SIP7
Recom RGZ-xx1509D RGZ-xx1509D 2 W 5, 12, 24 +15V/-9V 3 kVDC or 4 kVDC EN DIP14
Recom RxxP21509D RxxP21509D 2 W 5, 12, 24 +15V/-9 V 6.4 kVDC EN SIP7

High Isolation Asymmetric Output DC/DC converters for SiC MOSFETs

To meet the challenging requirements of MOSFETs, RECOM has developed DC/DC converter series for SiC MOSFETs that include 3 kVDC, 4 kVDC, 5.2 kVDC, and even 6.4 kVDC isolation to ensure that the isolation barrier stands up to even the harshest tests. The various series are available with input voltages of 5 V, 12 V, 15 V or 24 V and feature asymmetric outputs of +20 V and -5 V to efficiently and effectively switch the SiC MOSFET.

 

Features

  • Power Sharing
  • Asymmetric outputs +20/-05 VDC or +15/-03 VDC
  • Efficiency up to 87%
  • High Isolation up to 6.4 kVDC/1 second
  • Optional Continuous short circuit protection
  • Wide Operating Temperature Range from -40°C up to +90°C
  • UL60950 Certified, IEC/EN60950 Certified
  • 3 Year Warranty

Applications

  • DC/AC inverters
  • Renewable energy
  • Smart grid
  • Motor drives

 

  Model Power VIN VOUT Isolation Cert. Case
Recom RxxP21503D RxxP21503D 2 W 15, 12, 24 +15/-03 VDC 5.2 kVDC Certified EN-60950-1 SIP7
Recom RKZ-xx2005D RKZ-xx2005D 2 W 5, 12, 15, 24 +20/-05 VDC 3 kVDC or 4 kVDC UL60950-1 Certified
CSA C22.2 No. 60950-1-07
IEC/EN60950-1 Certified
EN55022		 SIP7
Recom RxxP22005D RxxP22005D 2 W 5, 12, 15, 24 +20/-05 VDC 5.2 kVDC UL60950-1 Certified
CSA C22.2 No. 60950-1-03
IEC/EN60950-1 Certified
EN55022		 SIP7

DC/DC supplies designed for fast-switching GaN drivers

The RP-xx06S and RxxP06S series come in a SIP& case and offer an output voltage of +6 V. The pot-core internal transformer provides up to 6.4 kVDC isolation to ensure that the isolation barrier withstands even the harshest operating conditions.These converters are available with input voltages of 5 V, 12 V, 15 V or 24 V, while some models have a +9 V output, which can be split via a Zener diode circuit to +6 V and -3 V to provide a negative switching gate voltage. These converters also feature a low isolation capacitance (<10 pF) and are IEC/EN-60950-1 certified.

 

Features

  • 6 V Output for GaN driver Applications
  • Up to 6.4 kVDC/sec Isolation in compact size
  • Low isolation capacitance (10 pF max.)
  • UL/IEC/EN62368-1, IEC/EN60950-1 certified (RxxP06S)
  • UL/IEC60950, IEC/EN60601-1 certified (RP-xx06S)

Applications

  • DC/AC inverters
  • Renewable energy
  • Smart grid
  • Motor drives

 

  Model Power VIN VOUT Isolation Cert. Case
Recom RP-xx06S RP-xx06S 1 W 5, 12, 15, 24 6 5.2 kV (5200 V) UL/IEC60950 Certified SIP7
Recom RxxP06S RxxP06S 1 W 5, 12, 15, 24 6 6.4 kV (6400 V) UL/IEC62368 Certified SIP7

Isolated DC/DC Converters for IGBT / SiC / GaN

The R-REF01-HB can be used to evaluate forward, flyback, buck, and boost topologies. The reference design consists of a half-bridge layout with a fully isolated driver stage using isolated power supplies for both the low-side and the high-side switching transistor types. The R-REF01-HB platform can be used to compare the real-life performance of various high power IGBT, 1st/2nd generation SiC, GaN, MOSFET and Cascode switching technologies.

Features

  • High-speed switching up to 1000V at up to 10A gate drive current
  • Half-bridge voltage up to 1kV
  • TTL-compatible signal input
  • Separate input for low and high-side switch for use with different topologies

Applications

  • IGBT, SiC, and GaN driver circuits
  • Motor control units
  • General purpose inverters
  • Uninterruptible power supplies
  • Welding machines

 

English  |  繁體中文