Solar Inverter

In high-power applications, IGBTs are still the preferred choice because they provide exceptional performance when dealing with high current and high voltage. The main drawback of IGBTs is their lower switching speed, which is not as important for solar inverter. onsemi offers both discrete IGBTs and more integrated module solutions. Field Stop7 is the new 1200 V IGBT family, which is optimized to have low conduction losses.

Silicon Carbide devices are more useful for higher voltages compared with traditional silicon MOSFET, reducing the conduction losses. SiC inverter solutions have lower losses than IGBT solutions. SiC MOSFETs can be switched faster, which helps to reduce the size of the passive devices, particularly the inductors. On the other hand, the full SiC system requires a completely new system design which further increases the costs. New family of 1200 V SiC MOSFET (M3S) is optimized for high temperature operation and is boasts very low R_DS(ON) as low as 22 mΩ, when driven by 18 V.

onsemi offers IGBT or SiC modules with various topologies, including half-bridge, or even whole three-level A-NPC in one package. The utilization of power modules brings many advantages including enhanced thermal properties, a reduction in system size and a faster time to market. These modules can be used at powers in the range of tens to hundreds of kilowatts.